Infineon Technologies - IRF9335PBF

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IRF9335PBF by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number IRF9335PBF
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
Datasheet IRF9335PBF Datasheet
In Stock331
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.4 A
Maximum Pulsed Drain Current (IDM): 43 A
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .059 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 98 mJ
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 5.4 A
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Pricing (USD)

Qty. Unit Price Ext. Price
331 $0.222 $73.482

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