IRF8788PBF by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	IRF8788PBF
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
Datasheet	IRF8788PBF Datasheet
In Stock	281

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	24 A
Maximum Pulsed Drain Current (IDM):	190 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	2.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.0028 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	230 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	24 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
281	-	-

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