2.5 W Power Field Effect Transistors (FET) 572

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
AF9575PS	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		4 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON	-55 Cel		.09 ohm	4 A	DUAL	R-PDSO-G8
DMT10H025SK3-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	2.8 mJ	41.2 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.03 ohm	41.2 A	SINGLE	R-PSSO-G2	1	DRAIN		HIGH RELIABILITY	TO-252	e3	30	260		AEC-Q101
DMT10H032LFVW-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	SQUARE	ENHANCEMENT MODE	1	68 A	25.3 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.032 ohm	17 A	DUAL	S-PDSO-F8	1	DRAIN				e3		260	6.9 pF	MIL-STD-202
ZVN4424G	Diodes Incorporated	N-CHANNEL	SINGLE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	240 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.5 A		.5 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	6 ohm	.5 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	FAST SWITCHING		e3		260
DMP3015LSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A		13 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.011 ohm	13 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	40	260
DMN2005UPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	150 A	133 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.0087 ohm	20 A	DUAL	R-PDSO-F8		DRAIN				e3		260	505 pF	MIL-STD-202
DMC3018LSD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	32 A		9.1 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.02 ohm	9.1 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	30	260
ZXMN2A02N8TA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		10.2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.02 ohm	8.3 A	DUAL	R-PDSO-G8	1		Not Qualified	LOW THRESHOLD		e3	30	260
DMP3021SFVWQ-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	128 A	84 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.015 ohm	11 A	DUAL	S-PDSO-F8		DRAIN				e3		260	225 pF	AEC-Q101; IATF 16949
DMP3020LSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		12 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.014 ohm	12 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3	40	260
DMN3031LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		9 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.0185 ohm	9 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
DMC3036LSD-13	Diodes Incorporated	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	24 A		6.9 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.036 ohm	6.9 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
DMP3035LSS-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		12 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.016 ohm	12 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
DMN3010LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A		16 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.009 ohm	16 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
DMN3052LSS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7.1 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.03 ohm	7.1 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY		e3		260
ZXMN2A02N8TC	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A		10.2 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.02 ohm	8.3 A	DUAL	R-PDSO-G8			Not Qualified					260
DMP3021SFVWQ-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	128 A	84 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.015 ohm	11 A	DUAL	S-PDSO-F8		DRAIN				e3		260	225 pF	AEC-Q101; IATF 16949
DMN3003LCA8-7	Diodes Incorporated	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	UNSPECIFIED	SWITCHING		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2				8	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.0051 ohm		BOTTOM	R-XBCC-N8									160 pF	MIL-STD-202
DMP3021SFVW-13	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	128 A	84 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.015 ohm	42 A	DUAL	S-PDSO-F8		DRAIN				e3		260	225 pF
DMP3021SFVW-7	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	128 A	84 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.015 ohm	42 A	DUAL	S-PDSO-F8		DRAIN				e3		260	225 pF
TPCF8004(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					7 A
TPCF8004(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					7 A
SSM6K514NU	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	49.1 mJ	12 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			.0173 ohm	12 A	DUAL	S-PDSO-N6		DRAIN					NOT SPECIFIED	NOT SPECIFIED
TPCF8002(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					7 A
TPCF8002(TE85L,F)	Toshiba	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					7 A
SSM6K504NU(TE85L)	Toshiba	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					9 A
SSM6K514NU,LF(T	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	49.1 mJ	12 A	6	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR			SILICON			.0173 ohm	12 A	DUAL	S-PDSO-N6		DRAIN					NOT SPECIFIED	NOT SPECIFIED
2SK2839(TE16L)	Toshiba	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Tin/Lead (Sn/Pb)		10 A								e0
2SK2742(TE16L)	Toshiba	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Tin/Lead (Sn/Pb)		3 A								e0
2SK2742	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	12 A	140 mJ	3 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON			.45 ohm	3 A	SINGLE	R-PSSO-F3		DRAIN	Not Qualified
2SK2741(TE16L)	Toshiba	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Tin/Lead (Sn/Pb)		5 A								e0
2SK2836(TE16L)	Toshiba	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			1 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Tin/Lead (Sn/Pb)		1 A								e0
2SK2839	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	40 A	282 mJ	10 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.06 ohm	10 A	SINGLE	R-PSSO-F3		DRAIN	Not Qualified
2SK2836	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	600 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	2 A	56 mJ	1 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON			9 ohm	1 A	SINGLE	R-PSSO-F3		DRAIN	Not Qualified
2SK2741	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	20 A	129 mJ	5 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON			.16 ohm	5 A	SINGLE	R-PSSO-F3		DRAIN	Not Qualified
UPA2738GR-E2-AT	Renesas Electronics	P-CHANNEL	SINGLE	YES	2.5 W							1			10 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel					10 A									NOT SPECIFIED	NOT SPECIFIED
HAT2036R-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	96 A		12 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.03 ohm	12 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260
UPA2708GR-E1-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2.5 W							1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			MATTE TIN		17 A								e3		260
HAT2044R-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		15 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.013 ohm	15 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260
UPA2708GR-E2-AT	Renesas Electronics	N-CHANNEL	SINGLE	YES	2.5 W							1			17 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			MATTE TIN		17 A								e3		260
UPA2450BTL(2)-E2-A	Renesas Electronics	N-CHANNEL		YES	2.5 W						ENHANCEMENT MODE				8.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					8.6 A
UPA2450BTL-E1	Renesas Electronics	N-CHANNEL		YES	2.5 W						ENHANCEMENT MODE				8.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					8.6 A
RJF0608JSP-00-J0	Renesas Electronics	N-CHANNEL	SINGLE	YES	2.5 W							1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					5 A
HAF1010RJ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A		5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR			SILICON			.34 ohm	5 A	DUAL	R-PDSO-G8	1		Not Qualified
HAT2025R-EL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	64 A		8 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.05 ohm	8 A	DUAL	R-PDSO-G8	1		Not Qualified				20	260
UPA2742GR-E2-AT	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	35 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	28.9 mJ	17 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.008 ohm	17 A	DUAL	R-PDSO-G8			Not Qualified			e3
UPA2709GR-E1-A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A	17 mJ	13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN BISMUTH	.015 ohm	13 A	DUAL	R-PDSO-G8			Not Qualified			e6
UPA2211T1M-T1-AT	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	12 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	30 A		7.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.025 ohm	7.5 A	DUAL	R-PDSO-F8			Not Qualified				NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.