2.5 W Power Field Effect Transistors (FET) 572

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRF7456PBF-1	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W							1			16 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					16 A			1
IRF9333PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	75 A	100 mJ	9.2 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0194 ohm	9.2 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA
IRF7379QPBF	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	46 A		5.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN OVER NICKEL	.045 ohm	5.8 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	MS-012AA	e3
IRF7416PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	370 mJ	10 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.02 ohm	10 A	DUAL	R-PDSO-G8	1		Not Qualified	HIGH RELIABILITY	MS-012AA	e3	30	260
IRF7204PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A		5.3 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.06 ohm	5.3 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF8714PBF-1	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W							1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					14 A			1
IRF7413PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	58 A	260 mJ	12 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.011 ohm	13 A	DUAL	R-PDSO-G8	1		Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	MS-012AA	e3	30	260
IRF7807PBF-1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	66 A		8.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.025 ohm	8.3 A	DUAL	R-PDSO-G8	1				MS-012AA
IRF7420PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	46 A		11.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.014 ohm	11.5 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF7452PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	200 mJ	4.5 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.06 ohm	4.5 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF8252PBF-1	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W							1			25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					25 A			1
IRF7424PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	47 A		11 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.0135 ohm	11 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF7807VD1TRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			8.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					8.3 A
IRF7805Z	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	72 mJ	16 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON	-55 Cel	MATTE TIN	.0068 ohm	16 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF7424PBF-1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	47 A			8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel		.0135 ohm	11 A	DUAL	R-PDSO-G8					MS-012AA				410 pF
IRF7413GPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	58 A	260 mJ	13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.011 ohm	13 A	DUAL	R-PDSO-G8			Not Qualified	HIGH RELIABILITY, ULTRA LOW RESISTANCE	MS-012AA		40	260
IRF7410GPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	65 A		16 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.007 ohm	16 A	DUAL	R-PDSO-G8	1		Not Qualified	ULTRA LOW RESISTANCE	MS-012AA	e3	30	260
IRF9392PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	102 mJ	9.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0175 ohm	9.8 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA
IRF7404PBF-1	Infineon Technologies	P-CHANNEL	SINGLE	YES	2.5 W							1			7.7 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel			Matte Tin (Sn)		7.7 A			1					e3	30	260
AUIRF7379QTR	Infineon Technologies	N-CHANNEL AND P-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	2	46 A		4.8 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.045 ohm	4.8 A	DUAL	R-PDSO-G8	1			AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	MS-012AA	e3	40	260
IRF8714PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	65 mJ	14 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON	-55 Cel	Matte Tin (Sn)	.0087 ohm	14 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260	110 pF
IRF7425PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.0082 ohm	15 A	DUAL	R-PDSO-G8	1		Not Qualified	ULTRA LOW RESISTANCE	MS-012AA	e3	30	260
IRF8707GTRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			11 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					11 A			1
IRF8707PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	88 A	53 mJ	11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0119 ohm	11 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA
IRF9317PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	330 mJ	16 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0066 ohm	16 A	DUAL	R-PDSO-G8	1		Not Qualified
IRF7853PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	66 A	610 mJ	8.3 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.018 ohm	8.3 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF8252TRPBF-1	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W							1			25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					25 A			1
IRF7416QPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	45 A	370 mJ	10 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.02 ohm	10 A	DUAL	R-PDSO-G8	2		Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	MS-012AA	e3
IRF8721GPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	68 mJ	14 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0085 ohm	14 A	DUAL	R-PDSO-G8			Not Qualified		MS-012AA		40	260
IRF7413APBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	58 A	260 mJ	11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0135 ohm	12 A	DUAL	R-PDSO-G8			Not Qualified	HIGH RELIABILITY	MS-012AA		NOT SPECIFIED	NOT SPECIFIED
IRF7805PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		13 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.011 ohm	13 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF8714GTRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			14 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					14 A			1
IRF7422D2	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	20 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	33 A		4.6 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	.09 ohm	4.3 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e0
IRF7862TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	170 A	350 mJ	21 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.0033 ohm	21 A	DUAL	R-PDSO-G8	1				MS-012AA	e3	30	260
IRF8721PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	68 mJ	14 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.0085 ohm	14 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
IRF7832PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	260 mJ	20 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		Matte Tin (Sn)	.004 ohm	20 A	DUAL	R-PDSO-G8	1		Not Qualified		MS-012AA	e3	30	260
AF4362NSA	Diodes Incorporated	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Tin/Lead (Sn/Pb)		18 A								e0
AF4362NS	Diodes Incorporated	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Tin/Lead (Sn/Pb)		18 A								e0
ZXMS6003GTA	Diodes Incorporated	N-CHANNEL	SINGLE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		550 mJ	1.6 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.5 ohm	1.6 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified		TO-261AA	e3	30	260
ZXMS6002GTA	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		550 mJ	1.6 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.675 ohm	1.6 A	DUAL	R-PDSO-G4	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-261AA	e3	30	260
AF9563PS	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A		6 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON	-55 Cel		.04 ohm	6 A	DUAL	R-PDSO-G8									190 pF
AF4362NSL	Diodes Incorporated	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					18 A										260
AF9563PSA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A		6 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON	-55 Cel		.04 ohm	6 A	DUAL	R-PDSO-G8									190 pF
AF4362NSLA	Diodes Incorporated	N-CHANNEL	SINGLE	YES	2.5 W						ENHANCEMENT MODE	1			18 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					18 A										260
DMT10H032SFVW-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	SQUARE	ENHANCEMENT MODE	1	140 A	25.35 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.032 ohm	35 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	6 pF	MIL-STD-202
DMT10H032SFVW-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	SQUARE	ENHANCEMENT MODE	1	140 A	25.35 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.032 ohm	35 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	6 pF	MIL-STD-202
DMT10H032LFVW-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	SQUARE	ENHANCEMENT MODE	1	68 A	25.3 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	-55 Cel	MATTE TIN	.032 ohm	17 A	DUAL	S-PDSO-F8	1	DRAIN				e3		260	6.9 pF	MIL-STD-202
AF9575PSA	Diodes Incorporated	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	2.5 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		4 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	2.5 W	150 Cel	SILICON	-55 Cel		.09 ohm	4 A	DUAL	R-PDSO-G8

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.