Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
315 mJ |
30 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN OVER NICKEL |
.075 ohm |
30 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
TO-247AC |
e3 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
208 A |
214 mJ |
52 A |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.022 ohm |
52 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
e3 |
10 pF |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
904 A |
679 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0021 ohm |
226 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
e3 |
82 pF |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
776 A |
641 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
3 W |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0027 ohm |
194 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
e3 |
75 pF |
||||||||||||||||||||
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
315 mJ |
30 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.075 ohm |
30 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-247 |
e0 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
456 A |
210 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0074 ohm |
114 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
e3 |
33 pF |
|||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
211 mJ |
80 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
23 ns |
-55 Cel |
780 ns |
MATTE TIN |
.0085 ohm |
80 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
MO-240 |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
120 A |
315 mJ |
30 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.075 ohm |
30 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
TO-247AC |
e3 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
60 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1224 A |
911 mJ |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.0012 ohm |
36 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
e3 |
120 pF |
||||||||||||||||||||||
|
Littelfuse |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-55 Cel |
.1 ohm |
39 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-247AD |
NOT SPECIFIED |
NOT SPECIFIED |
9 pF |
||||||||||||||||||||||
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
82 mJ |
80 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
60 ns |
-55 Cel |
59 ns |
Matte Tin (Sn) - annealed |
.0045 ohm |
80 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
MO-240AA |
e3 |
30 |
260 |
20 pF |
AEC-Q101 |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
82 mJ |
80 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
60 ns |
-55 Cel |
59 ns |
Matte Tin (Sn) - annealed |
.0045 ohm |
80 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
MO-240AA |
e3 |
30 |
260 |
20 pF |
AEC-Q101 |
|||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
601 mJ |
224 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0024 ohm |
224 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
22 pF |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
601 mJ |
224 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0024 ohm |
224 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
22 pF |
AEC-Q101 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
510 mJ |
100 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0035 ohm |
100 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
82 mJ |
80 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
60 ns |
-55 Cel |
59 ns |
Matte Tin (Sn) - annealed |
.0045 ohm |
80 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
20 pF |
AEC-Q101 |
||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
818 A |
1014 mJ |
139 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
.005 ohm |
139 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-220AB |
13 pF |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 mJ |
80 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
214 W |
150 Cel |
SILICON |
30 ns |
-55 Cel |
48 ns |
Matte Tin (Sn) - annealed |
.0064 ohm |
80 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
MO-240AA |
e3 |
30 |
260 |
19 pF |
AEC-Q101 |
|||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
143 mJ |
80 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
51 ns |
-55 Cel |
79 ns |
MATTE TIN |
.0018 ohm |
80 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
143 mJ |
80 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
51 ns |
-55 Cel |
79 ns |
MATTE TIN |
.0018 ohm |
80 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
360 A |
1360 mJ |
90 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.016 ohm |
90 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
e3 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
340 mJ |
100 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0045 ohm |
100 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
560 A |
330 mJ |
140 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0023 ohm |
140 A |
SINGLE |
R-PSSO-G6 |
1 |
DRAIN |
Not Qualified |
TO-263 |
e3 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
340 mJ |
100 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.0042 ohm |
100 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
245 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
876 A |
864 mJ |
219 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0024 ohm |
100 A |
SINGLE |
R-PSSO-G6 |
1 |
DRAIN |
Not Qualified |
ULTRA-LOW RESISTANCE |
e3 |
30 |
245 |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1110 A |
633 mJ |
240 A |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
174 ns |
-55 Cel |
189 ns |
Matte Tin (Sn) - annealed |
.0022 ohm |
240 A |
SINGLE |
R-PSSO-G6 |
1 |
DRAIN |
TO-263CB |
e3 |
30 |
245 |
165 pF |
|||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
280 A |
1300 mJ |
70 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.023 ohm |
70 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
700 mJ |
20 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.25 ohm |
20 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
225 A |
844 mJ |
75 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.011 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
260 |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
225 A |
844 mJ |
75 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.011 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e0 |
235 |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
225 A |
844 mJ |
75 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.011 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e0 |
235 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
90 A |
450 mJ |
30 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.081 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
30 |
260 |
|||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
225 A |
844 mJ |
75 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.011 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e0 |
235 |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
90 A |
450 mJ |
30 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Tin/Lead (Sn80Pb20) |
.081 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e0 |
30 |
235 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
225 A |
844 mJ |
75 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.0095 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
e3 |
30 |
260 |
AEC-Q101 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
225 A |
844 mJ |
75 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.011 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
260 |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
90 A |
450 mJ |
30 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.081 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e0 |
235 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
90 A |
450 mJ |
30 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.081 ohm |
30 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
100 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
258 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
.0016 ohm |
258 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
75 pF |
AEC-Q101 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
761 A |
1014 mJ |
2 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.005 ohm |
139 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
TO-263AB |
e3 |
30 |
260 |
13 pF |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
214 W |
PLASTIC/EPOXY |
80 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
900 A |
601 mJ |
224 A |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0024 ohm |
224 A |
DUAL |
R-PDSO-F5 |
1 |
DRAIN |
e3 |
30 |
260 |
22 pF |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
156 A |
800 mJ |
60 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN |
.03 ohm |
60 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
888 A |
1176 mJ |
222 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
2.4 W |
175 Cel |
SILICON |
123 ns |
-55 Cel |
175 ns |
.0023 ohm |
120 A |
SINGLE |
R-PSFM-T3 |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
75 pF |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
684 A |
547 mJ |
120 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.0039 ohm |
120 A |
SINGLE |
R-PSFM-T3 |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
700 mJ |
20 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.29 ohm |
20 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247AC |
e3 |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
650 mJ |
20 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.29 ohm |
20 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
|||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
80 A |
650 mJ |
20 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.25 ohm |
20 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-247 |
e3 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
214 W |
PLASTIC/EPOXY |
55 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
450 mJ |
100 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.0044 ohm |
100 A |
SINGLE |
R-PSIP-T3 |
1 |
Not Qualified |
TO-262AA |
e3 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.