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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | FDP2D3N10C |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 214 W; Maximum Power Dissipation Ambient: 2.4 W; Maximum Pulsed Drain Current (IDM): 888 A; |
| Datasheet | FDP2D3N10C Datasheet |
| In Stock | 1,269 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 123 ns |
| Maximum Drain Current (ID): | 120 A |
| Maximum Pulsed Drain Current (IDM): | 888 A |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 214 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| Maximum Turn Off Time (toff): | 175 ns |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Power Dissipation Ambient: | 2.4 W |
| Maximum Drain-Source On Resistance: | .0023 ohm |
| Avalanche Energy Rating (EAS): | 1176 mJ |
| Other Names: |
2156-FDP2D3N10C-OS ONSONSFDP2D3N10C |
| Maximum Feedback Capacitance (Crss): | 75 pF |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 100 V |
| Maximum Drain Current (Abs) (ID): | 222 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
