230 W Power Field Effect Transistors (FET) 207

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STW13NK80Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

450 mJ

12 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.65 ohm

12 A

SINGLE

R-PSFM-T3

Not Qualified

TO-247

e3

PHP110NQ08LT,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

560 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.00995 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

TO-220AB

e3

PHP45NQ15T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

90.2 A

180 mJ

45.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.042 ohm

45.1 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

PHP110NQ08LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

560 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.00995 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

TO-220AB

e3

PHB110NQ08T,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

440 A

560 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.009 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

245

PHP110NQ08T,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

440 A

560 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.009 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

TO-220AB

e3

PHP45NQ15T,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

90.2 A

180 mJ

45.1 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.042 ohm

45.1 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

PHB152NQ03LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

75 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.005 ohm

75 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

PHB45NQ15T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

90.2 A

180 mJ

45.1 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.042 ohm

45.1 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

PHP33NQ20T,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

65.4 A

190 mJ

32.7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.077 ohm

32.7 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

PHP33NQ20T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

65.4 A

190 mJ

32.7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.077 ohm

32.7 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

PHP152NQ03LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

75 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.005 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

PHB110NQ08T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

440 A

560 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.009 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

245

PHP110NQ08T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

440 A

560 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.009 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

TO-220AB

e3

PHB45NQ15T/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

230 W

ENHANCEMENT MODE

1

45.1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

45.1 A

PHB33NQ20T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

65.4 A

190 mJ

32.7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.077 ohm

32.7 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

PHB33NQ20T/T3

NXP Semiconductors

N-CHANNEL

SINGLE

YES

230 W

ENHANCEMENT MODE

1

32.7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

32.7 A

PHB110NQ08LT

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

560 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.00995 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

245

BUK9515-100A,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

313 A

120 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.016 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

PSMN004-60P,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

500 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0036 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

PSMN009-100B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

120 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.0088 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

PSMN009-100B,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

120 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0088 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

PSMN008-75P,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

395 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0085 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

PSMN005-55P,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

268 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0067 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

PSMN004-60B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

500 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0036 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

245

BUK9509-75A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

440 A

562 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.00995 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK7515-100A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

120 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.015 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK7509-75A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

440 A

560 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.009 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK7615-100A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

120 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.015 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

245

BUK9615-100A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

313 A

120 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.016 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

BUK9506-55A,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

616 A

1100 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0067 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

BUK7509-75

NXP Semiconductors

N-CHANNEL

SINGLE

NO

230 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

75 A

PSMN070-200B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

140 A

462 mJ

33 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.07 ohm

35 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

BUK9615-100A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

313 A

120 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.016 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

BUK9609-75A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

440 A

562 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.00995 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

PSMN070-200P

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

462 mJ

33 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.07 ohm

35 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

PSMN005-55B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

268 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0067 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

245

PSMN009-100P,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

120 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0088 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK9605-30A,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

500 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.0054 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

245

BUK9606-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

616 A

1100 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.0067 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

245

PSMN009-100P

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

120 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0088 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK7506-55A,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

616 A

1100 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0063 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK9605-30A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

500 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.0054 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

245

PSMN070-200P,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

140 A

462 mJ

33 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.07 ohm

35 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

PSMN004-36B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

36 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

120 mJ

75 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0054 ohm

75 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

PSMN035-150B

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

230 W

PLASTIC/EPOXY

SWITCHING

150 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

460 mJ

48 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.035 ohm

50 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

245

PSMN005-75P,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

500 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.005 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

BUK9509-75A,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

230 W

PLASTIC/EPOXY

SWITCHING

75 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

440 A

562 mJ

75 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.00995 ohm

75 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.