263 W Power Field Effect Transistors (FET) 22

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FDP054N10

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

263 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

576 A

1153 mJ

144 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.0055 ohm

120 A

SINGLE

R-PSFM-T3

Not Qualified

ULTRA-LOW RESISTANCE

TO-220AB

e3

NOT SPECIFIED

NOT SPECIFIED

FDP045N10A_F102

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

263 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

656 A

637 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0045 ohm

120 A

SINGLE

R-PSFM-T3

ULTRA-LOW RESISTANCE

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

PSMN4R2-60PLQ

NXP Semiconductors

N-CHANNEL

SINGLE

NO

263 W

ENHANCEMENT MODE

1

130 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

130 A

BUK969R3-100E,118

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

263 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

405 A

219 mJ

100 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.0093 ohm

100 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

e3

30

245

AEC-Q101; IEC-60134

BUK768R1-100E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

263 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

PSMN3R9-60PSQ

NXP Semiconductors

N-CHANNEL

SINGLE

NO

263 W

ENHANCEMENT MODE

1

130 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

130 A

FDI045N10A_F102

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

263 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

656 A

637 mJ

120 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0045 ohm

120 A

SINGLE

R-PSIP-T3

ULTRA-LOW RESISTANCE

TO-262AA

e3

FDP032N08B_F102

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

263 W

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

844 A

649 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0033 ohm

120 A

SINGLE

R-PSFM-T3

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

PHW80NQ10T

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

263 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

481 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.015 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247

e3

PHW80NQ10T,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

263 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

320 A

481 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.015 ohm

80 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247

e3

BUK652R1-30C,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

263 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

960 A

870 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.0035 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

AEC-Q101; IEC-60134

BUK763R9-60E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

263 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

PSMN8R5-100PSQ

NXP Semiconductors

N-CHANNEL

SINGLE

NO

263 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

BUK964R2-60E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

263 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

BUK653R5-55C,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

263 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

700 A

455 mJ

120 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.0055 ohm

120 A

SINGLE

R-PSFM-T3

DRAIN

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

AEC-Q101; IEC-60134

PSMN8R5-108ESQ

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

263 W

PLASTIC/EPOXY

SWITCHING

108 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

429 A

219 mJ

100 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0085 ohm

100 A

SINGLE

R-PSIP-T3

DRAIN

TO-262AA

IEC-60134

BUK962R6-40E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

263 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

BUK663R5-55C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

263 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

BUK662R4-40C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

263 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

BUK661R8-30C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

263 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

PSMN8R5-100ESQ

NXP Semiconductors

N-CHANNEL

SINGLE

NO

263 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

BUK762R6-40E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

263 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.