NXP Semiconductors - PSMN8R5-100ESQ

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PSMN8R5-100ESQ by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PSMN8R5-100ESQ
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 263 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 100 A;
Datasheet PSMN8R5-100ESQ Datasheet
In Stock4,711
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 263 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 100 A
Maximum Drain Current (Abs) (ID): 100 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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Pricing (USD)

Qty. Unit Price Ext. Price
4,711 $0.595 $2,803.045

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