Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
N-CHANNEL |
SINGLE |
NO |
270 W |
1 |
40 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
MATTE TIN |
40 A |
e3 |
|||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
96 A |
1872 mJ |
24 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.19 ohm |
24 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
e3 |
||||||||||||||||||||||
|
TE Connectivity |
N-CHANNEL |
SINGLE |
270 W |
ENHANCEMENT MODE |
1 |
13 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
13 A |
|||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
NO |
270 W |
ENHANCEMENT MODE |
1 |
100 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
Tin (Sn) |
100 A |
e3 |
||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
270 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
75 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.01 ohm |
75 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
30 |
245 |
||||||||||||||||||
Fuji Electric |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
120 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
268 A |
719.1 mJ |
67 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
67 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
||||||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
90 A |
40 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON CARBIDE |
-55 Cel |
MATTE TIN |
.1 ohm |
40 A |
SINGLE |
R-PSFM-T3 |
1 |
DRAIN |
e3 |
245 |
25 pF |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
NO |
270 W |
ENHANCEMENT MODE |
1 |
100 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
Tin (Sn) |
100 A |
e3 |
||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
75 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN |
.01 ohm |
75 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
TO-220AB |
e3 |
||||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
270 W |
PLASTIC/EPOXY |
SWITCHING |
1200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
130 A |
7 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-55 Cel |
.069 ohm |
65 A |
SINGLE |
R-PSSO-G7 |
DRAIN |
BULK: 1000 |
30 pF |
||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
270 W |
ENHANCEMENT MODE |
1 |
100 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
100 A |
1 |
e3 |
30 |
245 |
|||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
270 W |
ENHANCEMENT MODE |
1 |
100 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
100 A |
1 |
e3 |
30 |
245 |
|||||||||||||||||||||||||||||||||
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
720 A |
610 mJ |
179 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
TIN LEAD |
.005 ohm |
179 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
HIGH RELIABILITY, AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e0 |
||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
720 A |
610 mJ |
179 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
MATTE TIN OVER NICKEL |
.005 ohm |
179 A |
SINGLE |
R-PSIP-T3 |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE |
TO-273AA |
e3 |
||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
155 A |
608 mJ |
38.8 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.065 ohm |
38.8 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-247 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
152 A |
569 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.065 ohm |
38 A |
SINGLE |
R-PSFM-T4 |
DRAIN |
TO-247 |
2.5 pF |
|||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE |
NO |
270 W |
ENHANCEMENT MODE |
1 |
38.8 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
38.8 A |
||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
650 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
152 A |
569 mJ |
4 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.065 ohm |
38 A |
SINGLE |
R-PSFM-T4 |
DRAIN |
TO-247 |
2.5 pF |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
155 A |
608 mJ |
38.8 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.074 ohm |
38.8 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
|||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
155 A |
608 mJ |
38.8 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.065 ohm |
38.8 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
|||||||||||||||||||||||||
|
Toshiba |
N-CHANNEL |
SINGLE |
NO |
270 W |
ENHANCEMENT MODE |
1 |
38.8 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
38.8 A |
||||||||||||||||||||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
155 A |
608 mJ |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.065 ohm |
38.8 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
TO-247 |
10 pF |
|||||||||||||||||||||||||
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
60 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.085 ohm |
60 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
BUILT IN FAST RECOVERY DIODE |
e0 |
||||||||||||||||||||||
|
Renesas Electronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
240 A |
60 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN COPPER |
.085 ohm |
60 A |
SINGLE |
R-PSFM-T3 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e2 |
||||||||||||||||||||
|
Littelfuse |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
200 A |
2500 mJ |
44 A |
3 |
IN-LINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
.064 ohm |
44 A |
SINGLE |
R-PSIP-T3 |
ISOLATED |
AVALANCHE RATED |
e1 |
10 |
260 |
UL RECOGNIZED |
||||||||||||||||||
|
Littelfuse |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
270 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
400 A |
2500 mJ |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN SILVER COPPER |
.011 ohm |
110 A |
SINGLE |
R-PSIP-T3 |
ISOLATED |
AVALANCHE RATED |
e1 |
10 |
260 |
700 pF |
UL RECOGNIZED |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.