STMicroelectronics - SCTH50N120-7

SCTH50N120-7 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number SCTH50N120-7
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 175 Cel;
Datasheet SCTH50N120-7 Datasheet
In Stock1,326
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 65 A
Maximum Pulsed Drain Current (IDM): 130 A
Surface Mount: YES
No. of Terminals: 7
Maximum Power Dissipation (Abs): 270 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G7
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .069 ohm
Maximum Feedback Capacitance (Crss): 30 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 1200 V
Additional Features: BULK: 1000
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