288 W Power Field Effect Transistors (FET) 140

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NP88N075KUE-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

75 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

352 A

450 mJ

88 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0085 ohm

88 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

PSMN1R6-40YLC:115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

288 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

100 A

STRH100N10FSY2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

288 W

UNSPECIFIED

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

288 A

3810 mJ

72 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

72 A

SINGLE

R-XSFM-T3

Not Qualified

HIGH RELIABILITY, AVALANCHE RATED

TO-254AA

STRH100N6FSY2

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

288 W

UNSPECIFIED

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

384 A

1374 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

80 A

SINGLE

R-XSFM-T3

Not Qualified

HIGH RELIABILITY, AVALANCHE RATED

TO-254AA

NP110N03PUG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

440 A

110 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0015 ohm

110 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

NP52N055SUG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

170 A

52 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.014 ohm

52 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e0

NP82N055PUG-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

328 A

82 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0052 ohm

82 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

10

260

NP82N03PUG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

328 A

82 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0028 ohm

82 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

NP82N055PUG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

328 A

82 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0052 ohm

82 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

NP110N03PUG-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

NP55N055SUG-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

220 A

55 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.011 ohm

55 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

10

260

NP110N03PUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

NP55N055SUG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

220 A

55 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.01 ohm

55 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e0

NP110N04PUJ-E1B-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

440 A

518 mJ

110 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0018 ohm

110 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP110N055PUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

440 A

110 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0028 ohm

110 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

NOT SPECIFIED

NOT SPECIFIED

NP60N055KUG-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

288 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

10

260

NP110N04PUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

NP110N04PUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

NP82N04PUG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

328 A

82 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0035 ohm

82 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

NP110N04PDG-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

440 A

110 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN BISMUTH

.0032 ohm

110 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e6

NP110N03PUG-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NP110N03PUG-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

NP60N04MUG

Renesas Electronics

N-CHANNEL

SINGLE

NO

288 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

110 A

e0

NP110N055PUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

440 A

110 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.0028 ohm

110 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

NP55N055SDG-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

220 A

55 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.01 ohm

55 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

10

260

NP55N04SUG-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

ENHANCEMENT MODE

1

55 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

55 A

10

260

NP110N055PUG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

440 A

110 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0024 ohm

110 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

NP110N055PUG-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NP110N03PUG-E2

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NP82N04PUG-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

328 A

82 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0035 ohm

82 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

10

260

NP110N04PUG-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

440 A

110 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0018 ohm

110 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

10

260

NP110N055PUG-E2

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NP11N055PUG

Renesas Electronics

N-CHANNEL

SINGLE

NO

288 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

110 A

e0

NP110N03PUG-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NP70N04MUG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

288 W

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

280 A

110 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.005 ohm

70 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

NP110N04PUG-E1

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NP60N055KUG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0094 ohm

60 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

NP110N055PUG-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

NP52N055SUG-AZ

Renesas Electronics

N-CHANNEL

SINGLE

NO

288 W

ENHANCEMENT MODE

1

52 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

52 A

10

260

NP60N03KUG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0048 ohm

60 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

NP110N04PUG-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NOT SPECIFIED

NOT SPECIFIED

NP60N04KUG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

240 A

60 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0061 ohm

60 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e0

NP55N04SUG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

220 A

90 mJ

55 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.0065 ohm

55 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e0

NP110N03PUG-E1

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NP110N055PUG-E1

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NP55N055SDG

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

288 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

220 A

55 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.012 ohm

55 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e0

NP110N055PUG-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

NP110N04PUG-E2

Renesas Electronics

N-CHANNEL

SINGLE

YES

288 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.