STMicroelectronics - STRH100N10FSY2

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STRH100N10FSY2 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STRH100N10FSY2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 288 W; Transistor Application: SWITCHING; Package Body Material: UNSPECIFIED;
Datasheet STRH100N10FSY2 Datasheet
In Stock4,737
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 72 A
Maximum Pulsed Drain Current (IDM): 288 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 288 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Avalanche Energy Rating (EAS): 3810 mJ
JEDEC-95 Code: TO-254AA
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY, AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 72 A
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