341 W Power Field Effect Transistors (FET) 9

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRFP4137PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

341 W

1

38 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

38 A

NOT SPECIFIED

NOT SPECIFIED

PSMN2R3-100SSE

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

341 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1047 A

732 mJ

262 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0022 ohm

262 A

SINGLE

R-PSSO-G4

1

DRAIN

HIGH RELIABILITY

e3

30

260

47 pF

IEC-60134

FCB20N60-F085

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

341 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

480 mJ

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.198 ohm

20 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-263AB

e3

30

245

AEC-Q101

IRFB4137PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

341 W

1

38 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

38 A

NOT SPECIFIED

NOT SPECIFIED

AUIRFP4409

Infineon Technologies

N-CHANNEL

SINGLE

NO

341 W

1

38 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

38 A

NOT SPECIFIED

NOT SPECIFIED

IRFP7530PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

341 W

1

281 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

281 A

e3

PSMN2R3-80SSF

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

341 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1038 A

663 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.0034 ohm

240 A

SINGLE

R-PSSO-G4

3

DRAIN

AVALANCHE RATED

20

260

260 pF

IEC-60134

PSMN2R6-100SSF

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

341 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

955 A

578 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.0039 ohm

200 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

e3

30

260

126 pF

IEC-60134

PSMN3R3-100SSF

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

341 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

848 A

478 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.005 ohm

180 A

SINGLE

R-PSSO-G4

1

DRAIN

AVALANCHE RATED

e3

30

260

107 pF

IEC-60134

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.