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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | IRFP7530PBF |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 341 W; JESD-609 Code: e3; Maximum Drain Current (ID): 281 A; |
| Datasheet | IRFP7530PBF Datasheet |
| In Stock | 828 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | 341 W |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (ID): | 281 A |
| Maximum Drain Current (Abs) (ID): | 281 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |









