38 W Power Field Effect Transistors (FET) 140

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NTMYS7D3N04CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	269 A	65 mJ	52 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.012 ohm	17 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260
NVTYS007N04CTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY	AMPLIFIER	40 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	1	214 A	72 mJ	51 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0073 ohm	14 A	DUAL	R-PDSO-X5	1					e3	30	260	16 pF	AEC-Q101
NTMFS4983NFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	320 A	101 mJ	106 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0031 ohm	22 A	DUAL	R-PDSO-F5	1	DRAIN				e3	NOT SPECIFIED	NOT SPECIFIED
FQPF9N25CYDTU	Onsemi	N-CHANNEL	SINGLE	NO	38 W						ENHANCEMENT MODE	1			8.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Matte Tin (Sn) - annealed		8.8 A								e3
FQPF9N25CT	Onsemi	N-CHANNEL	SINGLE	NO	38 W							1			8.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Matte Tin (Sn) - annealed		8.8 A								e3
FCD900N65S3Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11.3 A		4.5 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.9 ohm	4.5 A	SINGLE	R-PSSO-G2		DRAIN			TO-252AA		NOT SPECIFIED	NOT SPECIFIED
FQPF5N50C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	300 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	1.4 ohm	5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
HUFA76407P3	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			13 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	56 ns	-55 Cel	132 ns		.092 ohm	12 A	SINGLE	R-PSFM-T3		DRAIN			TO-220AB
NTTFS008N04CTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	193 A	65 mJ	48 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0085 ohm	14 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260
FQPF5P20	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	13.6 A	330 mJ	3.4 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	1.4 ohm	3.4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3
FQPF10N20C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	38 A	210 mJ	9.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.36 ohm	9.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
FDPF51N25RDTU	Onsemi	N-CHANNEL	SINGLE	NO	38 W							1			51 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					MATTE TIN		51 A								e3
NVMFD6H852NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	98 A	86 mJ	7 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0315 ohm	7 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	4 pF	AEC-Q101
NVTFS008N04CTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	193 A	75 mJ	14 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0085 ohm	14 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	15 pF	AEC-Q101
NTTFS5C466NLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	200 A	72 mJ	51 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.012 ohm	51 A	DUAL	S-PDSO-F8	1					e3	30	260	16 pF
NVMYS7D3N04CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	269 A	65 mJ	52 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.012 ohm	17 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260		AEC-Q101
NVMFD5C466NWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	169 A	72 mJ	49 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0081 ohm	14 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260		AEC-Q101
NTMFD5C466NT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	169 A	72 mJ	49 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0081 ohm	14 A	DUAL	R-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	14 pF
NVTFWS008N04CTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	193 A	75 mJ	14 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0085 ohm	14 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	15 pF	AEC-Q101
FDPF51N25YDTU	Onsemi	N-CHANNEL	SINGLE	NO	38 W							1			51 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					MATTE TIN		51 A								e3
FQPF5P20RDTU	Onsemi	P-CHANNEL	SINGLE	NO	38 W							1			3.4 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel					MATTE TIN		3.4 A								e3
FQPF5N50CYDTU	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	300 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	1.4 ohm	5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
NTMFD6H852NLT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	98 A	86 mJ	25 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.0315 ohm	7 A	DUAL	R-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	4 pF
FQPF30N06L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	90 A	350 mJ	22.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.045 ohm	22.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3
NVMFD5C466NT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	169 A	72 mJ	49 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0081 ohm	14 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260		AEC-Q101
FQPF5N50CF	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	300 mJ	5 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	135 ns	-55 Cel	215 ns		1.55 ohm	5 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				20 pF
FQPF19N10	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	54.4 A	220 mJ	13.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.1 ohm	13.6 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3
PSMN010-30MLDX	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	178 A	24 mJ	45 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON					.0141 ohm	45 A	SINGLE	R-PSSO-G4		DRAIN								IEC-60134
IPA320N20NM3S	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	104 A	190 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.032 ohm	26 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			5 pF
BSF077N06NT3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	METAL	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	224 A	150 mJ	56 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0077 ohm	13 A	BOTTOM	R-MBCC-N3		DRAIN	Not Qualified
IPU105N03LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	245 A	30 mJ	35 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0105 ohm	35 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-251AA	e3
SPB03N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A	100 mJ	3.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	1.4 ohm	3.2 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED, HIGH VOLTAGE	TO-263AB	e3		245
SPS03N60C3AT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A	100 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel	120 ns		1.4 ohm	3.2 A	SINGLE	R-PSIP-T3				AVALANCHE RATED	TO-251				5 pF
SPU03N60S5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	5.7 A	100 mJ	3.2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	1.4 ohm	3.2 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-251AA	e3
SPS03N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A	100 mJ	3.2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	1.4 ohm	3.2 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-251AA	e3
SPB03N60S5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY		600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5.7 A	100 mJ	3.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	1.4 ohm	3.2 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-263AB	e3		245
SPA04N80C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	170 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	1.3 ohm	4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED, HIGH VOLTAGE	TO-220AB	e3
SP001557756	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	62 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.175 ohm	11 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED	TO-251AA				92 pF
SPU03N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A	100 mJ	3.2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	1.4 ohm	3.2 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-251AA	e3
SP001557198	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	44 A	62 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.175 ohm	11 A	SINGLE	R-PSSO-G2		DRAIN		AVALANCHE RATED	TO-252AA				92 pF
SPS03N60C3BT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A	100 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel	120 ns		1.4 ohm	3.2 A	SINGLE	R-PSIP-T3				AVALANCHE RATED	TO-251				5 pF
SPD03N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A	100 mJ	3.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	1.4 ohm	3.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3		260
BSZ900N15NS3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	52 A	30 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.09 ohm	13 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified			e3		260
SPP03N60S5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	5.7 A	100 mJ	3.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	1.4 ohm	3.2 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED, HIGH VOLTAGE	TO-220AB	e3
IPP114N03LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	30 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.0114 ohm	30 A	SINGLE	R-PSFM-T3	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-220AB	e3
SPD03N60S5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	38 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	5.7 A	100 mJ	3.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	1.4 ohm	3.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3		260
IRFU9024NCPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	62 mJ	11 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN OVER NICKEL	.175 ohm	11 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-251AA	e3	30	260
IPA050N10NM5S	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	38 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	264 A	110 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.005 ohm	66 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			25 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.