Onsemi - NTMFD6H852NLT1G

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NTMFD6H852NLT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMFD6H852NLT1G
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; JESD-30 Code: R-PDSO-F8; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet NTMFD6H852NLT1G Datasheet
In Stock2,345
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 7 A
Maximum Pulsed Drain Current (IDM): 98 A
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 38 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0315 ohm
Avalanche Energy Rating (EAS): 86 mJ
Maximum Feedback Capacitance (Crss): 4 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 80 V
Maximum Drain Current (Abs) (ID): 25 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
2,345 $0.597 $1,399.965

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