39 W Power Field Effect Transistors (FET) 66

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SI7463ADP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	UNSPECIFIED	SWITCHING	40 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	70 A	45 mJ	46 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.01 ohm	46 A	DUAL	R-XDSO-C5		DRAIN				e3
SI7611DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	UNSPECIFIED	SWITCHING	40 V	C BEND	SQUARE	ENHANCEMENT MODE	1	20 A	26 mJ	18 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.025 ohm	9.3 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
FCPF190N60E	Onsemi	N-CHANNEL	SINGLE	NO	39 W							1			20.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Matte Tin (Sn) - annealed		20.6 A								e3	NOT SPECIFIED	NOT SPECIFIED
FCPF190N60E-F152	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	61.8 A	400 mJ	20.6 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	94 ns	-55 Cel	252 ns	Matte Tin (Sn) - annealed	.19 ohm	20.6 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			165 pF
FCPF190N60E_F152	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	61.8 A	400 mJ	20.6 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.19 ohm	20.6 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
FCPF190N60	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60.6 A	400 mJ	20.2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.199 ohm	20.2 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
FCPF190N60E-F154	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	61.8 A	400 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	94 ns	-55 Cel	252 ns	Matte Tin (Sn) - annealed	.19 ohm	20.6 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			165 pF
FDPF12N60NZ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	565 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.65 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
CSD17507Q5AT	Texas Instruments	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	163 A	45 mJ	65 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0161 ohm	65 A	DUAL	R-PDSO-N8	1	DRAIN		AVALANCHE RATED		e3	30	260	30 pF
SIS176LDN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY	SWITCHING	70 V	FLAT	SQUARE	ENHANCEMENT MODE	1	100 A	11.25 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	32 ns	-55 Cel	62 ns		.0125 ohm	42.3 A	DUAL	S-PDSO-F5		DRAIN					40	260	9 pF
SIS862ADN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	100 A	11.25 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	34 ns	-55 Cel	52 ns		.011 ohm	52 A	DUAL	S-PDSO-F5		DRAIN					40	260	10 pF
NDF10N60ZG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	300 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.75 ohm	6 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
FDMD8680	Onsemi	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	487 A	337 mJ	66 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	64 ns	-55 Cel	68 ns		.0047 ohm	66 A	DUAL	R-PDSO-N8		SOURCE			MO-240AA		NOT SPECIFIED	NOT SPECIFIED	77 pF
FCPF22N60NT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	66 A	672 mJ	22 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.165 ohm	22 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
IRL620A	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	33 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.8 ohm	5 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3
SI7114ADN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	UNSPECIFIED	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	1	60 A	45 mJ	35 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0075 ohm	18 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3
FDMS4435BZ	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	50 A	18 mJ	35 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.02 ohm	9 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	MO-240AA	e3	30	260
SIR418DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY	SWITCHING	40 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	70 A	45 mJ	40 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.005 ohm	23.5 A	DUAL	R-PDSO-C5		DRAIN	Not Qualified			e3
SQS460EN-T1_GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY		60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	32 A	16 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	20 ns	-55 Cel	40 ns		.036 ohm	8 A	DUAL	S-PDSO-F8		DRAIN	Not Qualified				40	240	65 pF	AEC-Q101
FDD8778	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	145 A	24 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn) - annealed	.014 ohm	35 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
FCD2250N80Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.5 A	21.6 mJ	2.6 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	55 ns	-55 Cel	89 ns	Matte Tin (Sn) - annealed	2.25 ohm	2.6 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	245
FQPF3N80C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	320 mJ	3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	4.8 ohm	3 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
SQS460EN-T1_BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY		60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	32 A	16 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	20 ns	-55 Cel	40 ns		.036 ohm	8 A	DUAL	S-PDSO-F8		DRAIN					40	240	65 pF	AEC-Q101
NDD02N40-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY		400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6.9 A	120 mJ	1.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0055 ohm	1.7 A	SINGLE	R-PSIP-T3	3	DRAIN				e3	30	260
FDU8778	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	145 A	24 mJ	40 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	47 ns	-55 Cel	120 ns		.014 ohm	35 A	SINGLE	R-PSIP-T3					TO-251AA		NOT SPECIFIED	NOT SPECIFIED	162 pF
NDD02N40T4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY		400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.9 A	120 mJ	1.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0055 ohm	1.7 A	SINGLE	R-PSSO-G2	3	DRAIN				e3	30	260
NDF11N50ZG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	42 A	420 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.52 ohm	6.7 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
NDF10N60ZH	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY		600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	300 mJ	10 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.75 ohm	6 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
NDF11N50ZH	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY		500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	420 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.52 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
FCU2250N80Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6.5 A	21.6 mJ	2.6 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	55 ns	-55 Cel	89 ns	MATTE TIN	2.25 ohm	2.6 A	SINGLE	R-PSIP-T3					TO-251AA	e3
FCPF150N65F	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	72 A	663 mJ	24 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	106 ns	-55 Cel	178 ns	Matte Tin (Sn) - annealed	.15 ohm	24 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
FCPF190N65FL1-F154	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	61.8 A	400 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	92 ns	-55 Cel	152 ns	Matte Tin (Sn) - annealed	.19 ohm	20.6 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			.68 pF
NVMFS5826NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	130 A	20 mJ	26 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn) - annealed	.032 ohm	26 A	DUAL	R-PDSO-F5	1	DRAIN				e3	NOT SPECIFIED	NOT SPECIFIED
FCPF190N65FL1	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	61.8 A	400 mJ	20.6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.19 ohm	20.6 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
NVMFS5826NLWFT1G	Onsemi	N-CHANNEL	SINGLE	YES	39 W							1			26 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					MATTE TIN		26 A			1					e3	30	260
NVMFS5826NLT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	130 A	20 mJ	26 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Matte Tin (Sn) - annealed	.032 ohm	26 A	DUAL	R-PDSO-F5	1	DRAIN				e3	NOT SPECIFIED	NOT SPECIFIED
NVMFS5826NLWFT3G	Onsemi	N-CHANNEL	SINGLE	YES	39 W							1			26 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					TIN		26 A			1					e3	30	260
FCPF190N60-F154	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60.6 A	400 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	80 ns	-55 Cel	158 ns	Matte Tin (Sn) - annealed	.199 ohm	20.2 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			128 pF
FDPF7N50U	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	270 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN		5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
FCPF190N60-F152	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60.6 A	400 mJ	20.2 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	80 ns	-55 Cel	158 ns	MATTE TIN	.199 ohm	20.2 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			128 pF
PH5330	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A		50 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.01 ohm	50 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE
BSC886N03LSG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	260 A	20 mJ	65 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0092 ohm	13 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED				260
BSN045NE2LSXUSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	5 mJ		6	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.0065 ohm	50 A	BOTTOM	R-XBCC-N6		DRAIN					NOT SPECIFIED	NOT SPECIFIED	32 pF
BSN045NE2LS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	5 mJ		6	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.0065 ohm	50 A	BOTTOM	R-XBCC-N6		DRAIN					NOT SPECIFIED	NOT SPECIFIED	32 pF
SPA06N80C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	230 mJ	4.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.9 ohm	6 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED, HIGH VOLTAGE	TO-220AB	e3
IRFU9120NPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	26 A	100 mJ	6.5 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN OVER NICKEL	.48 ohm	6.6 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	TO-251AA	e3	30	260
IPA057N08N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	39 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	290 mJ	60 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.0057 ohm	60 A	SINGLE	R-PSFM-T3	1	ISOLATED	Not Qualified		TO-220AB	e3
IRFR9120NPBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	39 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	26 A	100 mJ	6.5 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.48 ohm	6.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	TO-252AA	e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.