4.6 W Power Field Effect Transistors (FET) 46

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NTMFD4C20NT1G

Onsemi

N-CHANNEL

YES

4.6 W

27.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

27.4 A

1

e3

30

260

UPA2731UT1A-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE

YES

4.6 W

1

44 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

44 A

NOT SPECIFIED

NOT SPECIFIED

UPA2725T1A-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

150 A

62 mJ

25 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0075 ohm

25 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e6

UPA2732UT1A-E2-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

160 A

40 mJ

40 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0067 ohm

40 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e6

UPA2722T1A-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

170 A

84 mJ

29 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0046 ohm

29 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e3

UPA2722UT1A-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

4.6 W

1

29 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

29 A

UPA2723UT1A-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

109 mJ

33 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0035 ohm

33 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

TAPE AND REEL

e6

UPA2731UT1A-E2-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

180 A

48 mJ

44 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0064 ohm

44 A

DUAL

R-PDSO-F8

Not Qualified

e6

UPA2732T1A-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE

YES

4.6 W

1

40 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

40 A

e3

UPA2723UT1A-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

109 mJ

33 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0035 ohm

33 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e3

UPA2722UT1A-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

4.6 W

1

29 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

29 A

NOT SPECIFIED

NOT SPECIFIED

UPA2724UT1A-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

4.6 W

1

29 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

29 A

NOT SPECIFIED

NOT SPECIFIED

UPA2725T1A-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

150 A

62 mJ

25 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0075 ohm

25 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e3

UPA2727UT1A-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

4.6 W

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

NOT SPECIFIED

NOT SPECIFIED

UPA2726UT1A-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

4.6 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

NOT SPECIFIED

NOT SPECIFIED

UPA2725UT1A-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

4.6 W

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

25 A

e3

UPA2723UT1A-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

109 mJ

33 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0035 ohm

33 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UPA2732T1A-E2-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

160 A

40 mJ

40 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0067 ohm

40 A

DUAL

R-PDSO-N8

DRAIN

Not Qualified

e6

UPA2743T1A-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

170 A

84.1 mJ

29 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0046 ohm

29 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UPA2725T1A-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

150 A

62 mJ

25 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0075 ohm

25 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e6

UPA2727UT1A-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

4.6 W

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

NOT SPECIFIED

NOT SPECIFIED

UPA2725UT1A-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

4.6 W

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

25 A

NOT SPECIFIED

NOT SPECIFIED

UPA2727UT1A-E1-AZ

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SINGLE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

16 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.015 ohm

16 A

DUAL

R-PDSO-F8

Not Qualified

TAPE AND REEL

e6

UPA2722UT1A-E1-AZ

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SINGLE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

29 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0046 ohm

29 A

DUAL

R-PDSO-F8

Not Qualified

TAPE AND REEL

e6

UPA2731UT1A-E1-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

180 A

48 mJ

44 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0064 ohm

44 A

DUAL

R-PDSO-F8

Not Qualified

e6

UPA2727UT1A-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

4.6 W

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

UPA2724UT1A-E1-AZ

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SINGLE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

29 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.005 ohm

29 A

DUAL

R-PDSO-F8

Not Qualified

TAPE AND REEL

e6

UPA2725T1A-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

150 A

62 mJ

25 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0075 ohm

25 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e3

UPA2732T1A-E1-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

160 A

40 mJ

40 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0067 ohm

40 A

DUAL

R-PDSO-N8

DRAIN

Not Qualified

e6

UPA2725UT1A-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

4.6 W

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

25 A

e3

UPA2724UT1A-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

4.6 W

1

29 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

29 A

NOT SPECIFIED

NOT SPECIFIED

UPA2722T1A-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

170 A

84 mJ

29 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0046 ohm

29 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e6

UPA2723UT1A-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

109 mJ

33 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0035 ohm

33 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e6

UPA2743T1A-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

170 A

84.1 mJ

29 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0046 ohm

29 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

UPA2722UT1A-E2-AZ

Renesas Electronics

N-CHANNEL

SINGLE

YES

4.6 W

1

29 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

29 A

NOT SPECIFIED

NOT SPECIFIED

UPA2726UT1A-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

4.6 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

NOT SPECIFIED

NOT SPECIFIED

UPA2724UT1A-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

4.6 W

1

29 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

29 A

NOT SPECIFIED

NOT SPECIFIED

UPA2725UT1A-E1-AZ

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SINGLE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

25 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0075 ohm

25 A

DUAL

R-PDSO-F8

Not Qualified

TAPE AND REEL

e6

UPA2731T1A-E2-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

180 A

48 mJ

44 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0064 ohm

44 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e6

UPA2732UT1A-E1-AY

Renesas Electronics

P-CHANNEL

SINGLE

YES

4.6 W

1

40 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

40 A

e3

UPA2726UT1A-E1-AZ

Renesas Electronics

N-CHANNEL AND P-CHANNEL

SINGLE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

20 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.011 ohm

20 A

DUAL

R-PDSO-F8

Not Qualified

TAPE AND REEL

e6

UPA2722T1A-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

170 A

84 mJ

29 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0046 ohm

29 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e3

UPA2732UT1A-E1-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

160 A

40 mJ

40 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0067 ohm

40 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e6

UPA2722T1A-E1-AZ

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

170 A

84 mJ

29 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0046 ohm

29 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e6

UPA2731T1A-E1-AZ

Renesas Electronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

4.6 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

180 A

48 mJ

44 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.0064 ohm

44 A

DUAL

R-PDSO-F8

DRAIN

Not Qualified

e6

UPA2726UT1A-E2-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

4.6 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.