Renesas Electronics - UPA2727UT1A-E1-AZ

  1. Home
  2. Renesas Electronics - UPA2727UT1A-E1-AZ
UPA2727UT1A-E1-AZ by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number UPA2727UT1A-E1-AZ
Description N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.6 W; JESD-609 Code: e6; No. of Terminals: 8;
Datasheet UPA2727UT1A-E1-AZ Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 16 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN BISMUTH
No. of Terminals: 8
Maximum Power Dissipation (Abs): 4.6 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .015 ohm
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
JESD-609 Code: e6
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: TAPE AND REEL
Maximum Drain Current (Abs) (ID): 16 A
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

NDT456P by National Semiconductor

NDT456P

National Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain Current (ID): 7.5 A; No. of Elements: 1;
IRF640PBF by Vishay Intertechnology

IRF640PBF

Vishay Intertechnology

Vishay Intertechnology's IRF640PBF is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 125W, this transistor has an operating temperature range from -55 to 150 °C.
NTTFS5116PLTAG by Onsemi

NTTFS5116PLTAG

Onsemi

NTTFS5116PLTAG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 76A and EAS of 45mJ, operating in ENHANCEMENT MODE. With a compact SQUARE package style and high power dissipation of 40W, it offers reliable performance in various electronic systems.
IRF7103TRPBF by International Rectifier

IRF7103TRPBF

International Rectifier

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Body Material: PLASTIC/EPOXY; Additional Features: LOGIC LEVEL COMPATIBLE;
IRF7343TRPBF by Infineon Technologies

IRF7343TRPBF

Infineon Technologies

IRF7343TRPBF by Infineon is a Power FET with N-Channel and P-Channel types. It has 2 separate elements with built-in diode for switching applications. Features include 55V DS breakdown voltage, 38A max pulsed drain current, and 0.05 ohm max drain-source resistance. Ideal for enhancement mode operation in various electronic devices.
BSC030P03NS3GAUMA1 by Infineon Technologies

BSC030P03NS3GAUMA1

Infineon Technologies

BSC030P03NS3GAUMA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 200A IDM, and 0.0046 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 125W. The transistor has a small outline package style and can withstand temperatures from -55 to 150 °C.
IRFB4115PBF by International Rectifier

IRFB4115PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 380 W; Avalanche Energy Rating (EAS): 830 mJ; Maximum Drain Current (Abs) (ID): 104 A;
ZXMP6A13GTA by Diodes Incorporated

ZXMP6A13GTA

Diodes Incorporated

ZXMP6A13GTA by Diodes Inc. is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 2.3A.
ZXMP10A18GTA by Zetex Plc

ZXMP10A18GTA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.9 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
IRFP460LC by International Rectifier

IRFP460LC

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): 225;
SUM90P10-19L-E3 by Vishay Intertechnology

SUM90P10-19L-E3

Vishay Intertechnology

Vishay Intertechnology's SUM90P10-19L-E3 is a P-channel power FET with 100V DS breakdown voltage and 90A IDM. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 375W, this MOSFET has a drain-source on resistance of 0.019 ohm and can withstand temperatures from -55 to 175°C.
IRFZ44NLPBF by International Rectifier

IRFZ44NLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; No. of Terminals: 3;
IRF9530 by Harris Semiconductor

IRF9530

Harris Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Qualification: Not Qualified; Case Connection: DRAIN;
STD25NF10LT4 by STMicroelectronics

STD25NF10LT4

STMicroelectronics

STD25NF10LT4 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 25A Drain Current, 450mJ Avalanche Energy Rating, and operates in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and high power dissipation of 100W, it offers efficient performance in various electronic designs.
BSZ100N06LS3GXT by Infineon Technologies

BSZ100N06LS3GXT

Infineon Technologies

Infineon's BSZ100N06LS3GXT is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 55mJ EAS, and 0.0179 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 50W in a small outline package.
ZXMP10A18KTC by Zetex Plc

ZXMP10A18KTC

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .15 ohm;
FDS8949-F085 by Onsemi

FDS8949-F085

Onsemi

FDS8949-F085 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage. It features 2 elements with built-in diode for SWITCHING applications. With 20A IDM and 0.029 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C, making it ideal for high-power electronics.
FDD6637 by Fairchild Semiconductor

FDD6637

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
IRF7410TRPBF by Infineon Technologies

IRF7410TRPBF

Infineon Technologies

Infineon's IRF7410TRPBF is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 65A IDM, 0.007 ohm RDS(on), and operates in ENHANCEMENT MODE. With GULL WING terminals and SMALL OUTLINE package, it can withstand -55 to 150 °C temperatures.
NVMFS5C604NLAFT1G by Onsemi

NVMFS5C604NLAFT1G

Onsemi

NVMFS5C604NLAFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.