Onsemi - NTMFD4C20NT1G

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NTMFD4C20NT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTMFD4C20NT1G
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.6 W; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet NTMFD4C20NT1G Datasheet
In Stock3
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 27.4 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
JESD-609 Code: e3
Maximum Power Dissipation (Abs): 4.6 W
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 27.4 A
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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