42 W Power Field Effect Transistors (FET) 279

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NTMFS6H858NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	137 A	151 mJ	29 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.0342 ohm	29 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	4.7 pF
FDMS8880	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	80 A	60 mJ	51 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0085 ohm	13.5 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
NVMFS6H858NWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	137 A	151 mJ	29 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.0207 ohm	29 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	4.7 pF	AEC-Q101
NVMYS020N08LHTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	142 A	198 mJ	30 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.025 ohm	30 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260		AEC-Q101
NVMFS6H858NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	142 A	198 mJ	30 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.025 ohm	30 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	5 pF	AEC-Q101
FDD6796A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	40 mJ	67 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0057 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
FDPC8014S	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	75 A	73 mJ	110 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Matte Tin (Sn) - annealed	.0038 ohm	20 A	DUAL	R-PDSO-N8	1	DRAIN				e3	30	260
NVMFS6H858NLWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	142 A	198 mJ	30 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.025 ohm	30 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	5 pF	AEC-Q101
NTTFS6H860NLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	122 A	121 mJ	30 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.026 ohm	8.1 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	5 pF
NVMFS6B85NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	93 A	116 mJ	19 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.072 ohm	5.6 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
NTD5C668NLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	250 A	104 mJ	48 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	Matte Tin (Sn) - annealed	.0128 ohm	48 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
NVMFS6B85NLWFT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	93 A	116 mJ	19 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN	.072 ohm	5.6 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
NTMFS6H858NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	142 A	198 mJ	30 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.025 ohm	30 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	5 pF
NVMFS6B85NLWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	93 A	116 mJ	19 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.072 ohm	5.6 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
FDD850N10LD	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	46 A	41 mJ	15.3 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.096 ohm	15.3 A	SINGLE	R-PSSO-G4	1	DRAIN			TO-252AD	e3	30	260
FDPF10N50UT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	320 mJ	8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	1.05 ohm	8 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
NVMFS6B85NLT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	93 A	116 mJ	19 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.072 ohm	5.6 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
FDPF12N50FT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	46 A	456 mJ	11.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.7 ohm	11.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
FDMS8888	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	80 A	54 mJ	21 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0095 ohm	13.5 A	DUAL	R-PDSO-N5	1	DRAIN				e3	30	260
FDPF12N50T	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	46 A	456 mJ	11.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.65 ohm	11.5 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3
FDPF13N50FT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A	684 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.54 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
NVMFS6H858NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	137 A	151 mJ	29 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	MATTE TIN	.0207 ohm	29 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	4.7 pF	AEC-Q101
FDPF10N50FT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	364 mJ	9 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.85 ohm	9 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
PH3230	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	2.5 mJ	50 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0073 ohm	50 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	MO-235
PSMN7R5-25YLC,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	42 W						ENHANCEMENT MODE	1			56 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel			TIN		56 A			1					e3	30	260
ISC058N04NM5	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	252 A	30 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN	.0072 ohm	56 A	DUAL	R-PDSO-F8	1	DRAIN				e3			52 pF	IEC-61249-2-21; IEC-68-1
IPU80R2K8CE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	90 mJ	1.9 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN	2.8 ohm	1.9 A	SINGLE	R-PSIP-T3	1				TO-251	e3		260
BSF024N03LT3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	METAL	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	400 A	125 mJ	106 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0032 ohm	15 A	BOTTOM	R-MBCC-N3	3	DRAIN	Not Qualified					260
BSF053N03LTG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	METAL	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	284 A	75 mJ	71 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0053 ohm	16 A	BOTTOM	R-MBCC-N3	3	DRAIN	Not Qualified	AVALANCHE RATED		e3		260
IPU50R1K4CEBKMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8.8 A	49 mJ	3.1 A	3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		1.4 ohm	4.8 A	SINGLE	R-PSIP-T3					TO-251		NOT SPECIFIED	NOT SPECIFIED
IPU50R1K4CEAKMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8.8 A	49 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN	1.4 ohm	4.8 A	SINGLE	R-PSIP-T3					TO-251	e3
IPU090N03LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	70 mJ	40 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0135 ohm	40 A	SINGLE	R-PSIP-T3	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-251	e3
IPD40N03S4L-08	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	23 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0083 ohm	40 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252			260
IPF090N03LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	70 mJ	40 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0135 ohm	40 A	SINGLE	R-PSSO-G3		DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-252	e3
IPU50R1K4CE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8.8 A	49 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN	1.4 ohm	4.8 A	SINGLE	R-PSIP-T3					TO-251	e3
IPS090N03LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	280 A	70 mJ	40 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0135 ohm	40 A	SINGLE	R-PSIP-T3	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-251	e3
SPU09P06PL	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	38.8 A	70 mJ	9.7 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.25 ohm	9.7 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-251	e3
SP001117754	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	90 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		2.7 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN			TO-252
SPU08P06P	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	35.32 A	70 mJ	8.8 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.3 ohm	8.83 A	SINGLE	R-PSIP-T3			Not Qualified	AVALANCHE RATED	TO-251AA	e3
SPB08P06P	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35.32 A	70 mJ	8.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.3 ohm	8.8 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-263AB	e0		220
SPB08P06PG	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35.2 A	70 mJ	8.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.3 ohm	8.8 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-263AB	e3		245
SPD30N03S2L-20	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	70 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.031 ohm	30 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-252AA	e3		260
IRF6655TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	34 A	11 mJ	4.2 A	2	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN SILVER COPPER	.062 ohm	4.2 A	BOTTOM	R-XBCC-N2	1	DRAIN	Not Qualified			e1	30	260
IRF6623PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	120 A	43 mJ	55 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN SILVER COPPER	.0057 ohm	16 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified			e1
IRFU120NPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	38 A	91 mJ	7.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN OVER NICKEL	.21 ohm	9.4 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-251AA	e3	30	260
IPP096N03LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	245 A	40 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0141 ohm	35 A	SINGLE	R-PSFM-T3	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-220AB	e3
SPA17N80C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	51 A	670 mJ	7.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN	.29 ohm	17 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e3
IRF6711SPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	150 A	62 mJ	84 A	2	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0038 ohm	19 A	BOTTOM	R-XBCC-N2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.