42 W Power Field Effect Transistors (FET) 279

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code
IRLR220	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	100 ns	115 ns		1.2 ohm	4 A	SINGLE	R-PSSO-G2		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFU9020	Samsung	P-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	440 mJ	9.9 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON				.28 ohm	9.9 A	SINGLE	R-PSIP-T3		Not Qualified
IRFS9Z30	Samsung	P-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY		50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.14 ohm	12 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFU320	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	11 A	16 mJ	3.1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	35 ns	65 ns		1.8 ohm	3.1 A	SINGLE	R-PSIP-T3		Not Qualified
IRLR024	Samsung	N-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A		14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	120 ns	70 ns		.15 ohm	14 A	SINGLE	R-PSSO-G2		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFU9024	Samsung	P-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A	440 mJ	8.8 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON				.28 ohm	9.9 A	SINGLE	R-PSIP-T3		Not Qualified
IRFR420	Samsung	N-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	210 mJ	2.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	33 ns	60 ns		3 ohm	2.5 A	SINGLE	R-PSSO-G2		Not Qualified
IRFR022	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	56 A	9.5 mJ	14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON			TIN LEAD	.12 ohm	14 A	SINGLE	R-PSSO-G2		Not Qualified			e0
IRFS9Z34	Samsung	P-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			12 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				.14 ohm	12 A	SINGLE	R-PSFM-T3	ISOLATED	Not Qualified		TO-220AB
IRFR9120	Samsung	P-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	370 mJ	5.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	79 ns	48 ns		.6 ohm	5.9 A	SINGLE	R-PSSO-G2		Not Qualified
IRFR9020	Samsung	P-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	440 mJ	9.9 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON				.28 ohm	9.9 A	SINGLE	R-PSSO-G2		Not Qualified
IRFR9022	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	36 A	440 mJ	9 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON			TIN LEAD	.33 ohm	9 A	SINGLE	R-PSSO-G2		Not Qualified			e0
IRFU9221	Samsung	P-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY		150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3.6 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	3.6 A	SINGLE	R-PSIP-T3		Not Qualified
IRFU224	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY		250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3.8 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.1 ohm	3.8 A	SINGLE	R-PSIP-T3		Not Qualified
IRLU121	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A		7.9 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	42 ns	75 ns		.4 ohm	7.9 A	SINGLE	R-PSIP-T3		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFU120	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34 A	30 mJ	8.4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	58 ns	59 ns		.27 ohm	8.4 A	SINGLE	R-PSIP-T3		Not Qualified
IRFR320	Samsung	N-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A	16 mJ	3.1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	35 ns	65 ns		1.8 ohm	3.1 A	SINGLE	R-PSSO-G2		Not Qualified
IRL621	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	100 ns	160 ns		1.2 ohm	4 A	SINGLE	R-PSFM-T3		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB
IRLU020	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A		14 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	120 ns	70 ns		.15 ohm	14 A	SINGLE	R-PSIP-T3		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFR224	Samsung	N-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.1 ohm	3.8 A	SINGLE	R-PSSO-G2		Not Qualified
IRLU120	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A		7.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	42 ns	75 ns		.4 ohm	7.9 A	SINGLE	R-PSIP-T3		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFU220	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	50 mJ	4.8 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	54 ns	43 ns		.8 ohm	4.6 A	SINGLE	R-PSIP-T3		Not Qualified
IRFU9022	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	440 mJ	9 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON			TIN LEAD	.33 ohm	9 A	SINGLE	R-PSIP-T3		Not Qualified			e0
IRFR9121	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	24 A	370 mJ	6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	79 ns	48 ns		.6 ohm	5.9 A	SINGLE	R-PSSO-G2		Not Qualified
IRLR121	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	32 A		7.9 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	42 ns	75 ns		.4 ohm	7.9 A	SINGLE	R-PSSO-G2		Not Qualified	LOGIC LEVEL COMPATIBLE
IRLR034A	Samsung	N-CHANNEL	SINGLE	YES	42 W						ENHANCEMENT MODE	1			23 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel						23 A
IRFU025	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	9.5 mJ	14 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON				.12 ohm	14 A	SINGLE	R-PSIP-T3		Not Qualified
IRFR9221	Samsung	P-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY		150 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	3.6 A	SINGLE	R-PSSO-G2		Not Qualified
IRFU020	Samsung	N-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	9.5 mJ	15 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON				.1 ohm	15 A	SINGLE	R-PSIP-T3		Not Qualified
IRLR020	Samsung	N-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	52 A		14 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	120 ns	70 ns		.15 ohm	14 A	SINGLE	R-PSSO-G2		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFU9121	Samsung	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	370 mJ	6 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	79 ns	48 ns		.6 ohm	5.9 A	SINGLE	R-PSIP-T3		Not Qualified
IRFU022	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	56 A	9.5 mJ	14 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON			TIN LEAD	.12 ohm	14 A	SINGLE	R-PSIP-T3		Not Qualified			e0
IRFU9120	Samsung	P-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	370 mJ	5.6 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	79 ns	48 ns		.6 ohm	5.9 A	SINGLE	R-PSIP-T3		Not Qualified
IRFR020	Samsung	N-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY	SWITCHING	50 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	9.5 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON				.1 ohm	15 A	SINGLE	R-PSSO-G2		Not Qualified
IRLU220	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	42 W	150 Cel	SILICON	100 ns	115 ns		1.2 ohm	4 A	SINGLE	R-PSIP-T3		Not Qualified	LOGIC LEVEL COMPATIBLE
IRFR224A	Samsung	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A	90 mJ	3.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.1 ohm	3.8 A	SINGLE	R-PSSO-G2	DRAIN	Not Qualified
IRFU9220	Samsung	P-CHANNEL	SINGLE	NO	42 W	PLASTIC/EPOXY		200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1			3.6 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	3.6 A	SINGLE	R-PSIP-T3		Not Qualified
IRFR9220	Samsung	P-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY		200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			3.6 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				1.5 ohm	3.6 A	SINGLE	R-PSSO-G2		Not Qualified
SSR1N45	Samsung	N-CHANNEL	SINGLE	YES	42 W	PLASTIC/EPOXY		450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			1.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				8.5 ohm	1.2 A	SINGLE	R-PSSO-G2		Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.