42 W Power Field Effect Transistors (FET) 279

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IPD20N03L	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	15 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN LEAD	.031 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-252AA	e0		255
IRF6721SPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	110 A	62 mJ	14 A	2	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN SILVER COPPER	.0073 ohm	14 A	BOTTOM	R-XBCC-N2		DRAIN	Not Qualified			e1
IPD105N04LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	10 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0105 ohm	40 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3		260
IRF6713STRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	170 A	34 mJ	95 A	2	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.003 ohm	22 A	BOTTOM	R-XBCC-N2	1	DRAIN	Not Qualified
SPD08P06P	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35.32 A	70 mJ	8.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.3 ohm	8.83 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3		260
BSB053N03LPG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	METAL	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	284 A	75 mJ	71 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0053 ohm	17 A	BOTTOM	R-MBCC-N3	3	DRAIN	Not Qualified	AVALANCHE RATED		e3		260
IRF6633APBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	130 A	65 mJ	69 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0056 ohm	16 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified				40	260
IRF6892STR1PBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	42 W							1			125 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					125 A
SPP02N80C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A	90 mJ	2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			2.7 ohm	2 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED, HIGH VOLTAGE	TO-220AB		NOT SPECIFIED	NOT SPECIFIED
IPD80R2K8CE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	90 mJ	1.9 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN	2.8 ohm	1.9 A	SINGLE	R-PSSO-G2	1				TO-252	e3
IPB096N03LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	245 A	40 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0141 ohm	35 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-263AB			245
IRF6655PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	34 A	11 mJ	4.2 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		SILVER NICKEL	.062 ohm	4.2 A	BOTTOM	R-XBCC-N3	3	DRAIN	Not Qualified			e4	30	260
IRF6721STRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	110 A	62 mJ	14 A	2	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		Tin/Silver/Copper (Sn/Ag/Cu)	.0073 ohm	14 A	BOTTOM	R-XBCC-N2	1	DRAIN	Not Qualified			e1	30	260
IRFI4510GPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	206 mJ	35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON			.0135 ohm	35 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB		NOT SPECIFIED	NOT SPECIFIED
IPD090N03LG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	70 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0135 ohm	40 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-252	e3		260
IRF6711STRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	150 A	62 mJ	84 A	4	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0038 ohm	19 A	BOTTOM	R-XBCC-N4	1	DRAIN	Not Qualified
IRF6645PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	45 A	29 mJ	5.7 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.035 ohm	5.7 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified				40	260
IRF8327STRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	110 A	62 mJ	14 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0073 ohm	14 A	BOTTOM	R-XBCC-N3	1	DRAIN				e3	40	260
IPD090N03LGE8177	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	40 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.0135 ohm	40 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252	e3
IPC50N04S5-5R8	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	30 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN	.0072 ohm	50 A	DUAL	R-PDSO-F8	1	DRAIN				e3			25 pF	AEC-Q101
IRFU222	Infineon Technologies	N-CHANNEL	SINGLE	NO	42 W						ENHANCEMENT MODE	1			3.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Lead (Sn/Pb)		3.8 A								e0
IRF6617PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	120 A	27 mJ	14 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0081 ohm	14 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified				40	260
IRFR120NPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	38 A	91 mJ	7.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN OVER NICKEL	.21 ohm	9.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	30	260
IRF6623TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	120 A	43 mJ	55 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN SILVER COPPER	.0057 ohm	16 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e1	30	260
IPD30N03S4L-09	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	28 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.009 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3		260
IRF6665TR1PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	34 A	11 mJ	19 A	2	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		SILVER NICKEL	.062 ohm	4.2 A	BOTTOM	R-XBCC-N2	3	DRAIN	Not Qualified	HIGH RELIABILITY		e4	30	260
SPD09P06PLG	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	38.8 A	70 mJ	9.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.25 ohm	9.7 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-252AB	e3		260
IPD50R1K4CE	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8.8 A	49 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	TIN	1.4 ohm	4.8 A	SINGLE	R-PSSO-G2	3				TO-252	e3
IRF6722SPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	110 A	82 mJ	58 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0073 ohm	13 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified				40	260
IRF6633ATRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	20 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	130 A	65 mJ	69 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN SILVER COPPER	.0056 ohm	16 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified			e1
SPD08P06PG	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	35.2 A	70 mJ	8.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.3 ohm	8.8 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-252	e3		260
IAUZ40N06S5N105	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY		60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	120 A	37 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	-55 Cel	TIN	.0105 ohm	40 A	DUAL	S-PDSO-N8		DRAIN				e3			18 pF	AEC-Q101
SPD02N80C3AT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A	90 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		2.7 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN			TO-252
SPD09P06PL	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	38.8 A	70 mJ	9.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		MATTE TIN	.25 ohm	9.7 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE	TO-252	e3		260
IRF6617TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	120 A	27 mJ	14 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN SILVER COPPER	.0081 ohm	14 A	BOTTOM	R-XBCC-N3	1	DRAIN	Not Qualified			e1	30	260
IRF6665TR1	Infineon Technologies	N-CHANNEL	SINGLE	YES	42 W						ENHANCEMENT MODE	1			19 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			TIN LEAD		19 A								e0
IRF6713SPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	170 A	34 mJ	95 A	2	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.003 ohm	22 A	BOTTOM	R-XBCC-N2		DRAIN	Not Qualified				40	260
IRF6722MPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	110 A	82 mJ	56 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0077 ohm	13 A	BOTTOM	R-XBCC-N3		DRAIN	Not Qualified				40	260
IRF6617TR1PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	120 A	27 mJ	14 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		SILVER NICKEL	.0081 ohm	14 A	BOTTOM	R-XBCC-N3	3	DRAIN	Not Qualified			e4	30	260
IPD50R1K4CEBTMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8.8 A	49 mJ	3.1 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		1.4 ohm	4.8 A	SINGLE	R-PSSO-G2					TO-252		NOT SPECIFIED	NOT SPECIFIED
IRF6713STR1PBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	42 W						ENHANCEMENT MODE	1			95 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					95 A
IRFR222	Infineon Technologies	N-CHANNEL	SINGLE	NO	42 W						ENHANCEMENT MODE	1			3.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			Tin/Lead (Sn/Pb)		3.8 A								e0
IPA028N08N3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	42 W	PLASTIC/EPOXY	SWITCHING	80 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	352 A	1430 mJ	89 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		TIN	.0028 ohm	89 A	SINGLE	R-PSFM-T3	1	ISOLATED	Not Qualified		TO-220AB	e3
IRF8327SPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	110 A	62 mJ	14 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.0073 ohm	14 A	BOTTOM	R-XBCC-N3	1	DRAIN				e3
IRF6892STRPBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	42 W							1			125 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					125 A			1
DMT3004LFG-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	95 A	110 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.0045 ohm	25 A	DUAL	S-PDSO-N8	1	DRAIN				e3			240 pF	MIL-STD-202
DMT3004LFG-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	95 A	110 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.0045 ohm	25 A	DUAL	S-PDSO-N8	1	DRAIN				e3		260	240 pF	MIL-STD-202
DMT3006LPS-13	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	42 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	31 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel	MATTE TIN	.0098 ohm	65 A	DUAL	R-PDSO-F8		DRAIN				e3		260	72 pF	MIL-STD-202

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.