50 W Power Field Effect Transistors (FET) 808

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2SJ479S	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.06 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
FS30ASJ-06F	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.028 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
HAF2011(S)-(2)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				40 A
RJE0601JPE-00-J3	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			40 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.045 ohm	40 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
NP34N06HLD	Renesas Electronics	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			34 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel				34 A
2SJ216	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.09 ohm	35 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e0
HAF1002-90STL	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A		15 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.13 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified
H7N0310LD	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.019 ohm	30 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
RJF0619JPE-00-J3	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			30 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel				30 A
H7N0310LS	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.019 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SK702	Renesas Electronics	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel		Tin/Lead (Sn/Pb)		5 A								e0
2SJ549STL-E	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	48 A		12 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.23 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6	20	245
2SJ549L	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	48 A		12 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.23 ohm	12 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
2SJ541	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.155 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
H5N5006LD-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A		3.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	3 ohm	3.5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e6
RJF0606JPE-00-J3	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W							1			40 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel				40 A
HAF1008S	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A		20 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.08 ohm	20 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
HAF2011L	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		40 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.033 ohm	40 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE			NOT SPECIFIED	NOT SPECIFIED
HAF2012(S)-(2)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				20 A
2SK3154-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	.15 ohm	15 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
2SK1400-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.7 ohm	7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK2939(S)-(1)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				35 A
RJK0204DPA-00#J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W							1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				50 A
RJK0304DPB-00-J0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0072 ohm	35 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified
2SK1750-Z	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	40.2 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		1.4 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified
2SK1621(L)	Renesas Electronics	N-CHANNEL	SINGLE	NO	50 W	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR		1			7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			.55 ohm	7 A	SINGLE	R-PSIP-T3			Not Qualified
2SK2355-Z	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	17.4 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		1.4 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE ENERGY RATED
2SK2684L-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.05 ohm	30 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e6
2SK1623STL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.12 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6
2SK1647S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	900 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6 A		2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		7 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SJ603-S	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	70 A	62.5 mJ	25 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.075 ohm	25 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-262AA
2SK2939(S)-(2)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			35 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				35 A
2SK1918L	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A		25 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.06 ohm	25 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6
2SK1647L-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A		2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	7 ohm	2 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6
2SK1620(S)-(2)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				10 A
2SK1301-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	.18 ohm	15 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
2SK1313STL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	1.4 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6
2SK3150S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.085 ohm	20 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SK1620(S)-(1)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				10 A
RJK0236DPA-00-J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W							1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				50 A
2SK3080	Renesas Electronics	N-CHANNEL	SINGLE	NO	50 W	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR		1			30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			.05 ohm	30 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB
2SK1620L	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.15 ohm	10 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
2SK1314S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		1.5 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SK1402	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A		4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		2.4 ohm	4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
2SK1314(S)-(1)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				5 A
2SK1647(S)-(2)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
2SK3214	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.19 ohm	10 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
2SK2912(S)-(2)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				40 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.