50 W Power Field Effect Transistors (FET) 808

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)
2SK2684L	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A		30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.05 ohm	30 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
2SK2912S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.04 ohm	40 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
2SK3109-ZJ-E1-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W							1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				10 A									NOT SPECIFIED	NOT SPECIFIED
2SK2930	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.05 ohm	35 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
RJK03M0DPA-00-J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W							1			65 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				65 A
2SK1313L	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	1.4 ohm	5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
2SK1302	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.12 ohm	20 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB
RJK0331DPB-00-J0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0049 ohm	40 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified
RJK0349DPA-01#J0B	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W							1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				45 A
2SK1313L-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	1.4 ohm	5 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6
2SK1832	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.9 ohm	10 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e0
2SK3424-ZJ	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	192 A		48 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.017 ohm	48 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-263AB
2SK2938S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		25 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.07 ohm	25 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified
2SK1831	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A		10 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.8 ohm	10 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
2SK3150STL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.085 ohm	20 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6	20	245
2SK1624S	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				4 A
2SK2939L	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.05 ohm	35 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified
RJK0380DPA-00-J53	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A		45 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	Nickel/Palladium/Gold (Ni/Pd/Au)	.0047 ohm	45 A	DUAL	R-XDSO-N5		DRAIN	Not Qualified			e4
2SK3109-ZJ-E2-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				10 A
RJK0304DPB-00#J0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.0072 ohm	35 A	SINGLE	R-PSSO-G4		DRAIN	Not Qualified			e0
2SK1199	Renesas Electronics	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				2 A
2SK2356-Z	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	17.4 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		1.5 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE ENERGY RATED
2SJ603(0)-Z-E1-AZ	Renesas Electronics	P-CHANNEL	SINGLE	YES	50 W							1			25 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				25 A									NOT SPECIFIED	NOT SPECIFIED
2SK3150(S)-(1)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			20 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				20 A
2SK972	Renesas Electronics	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				25 A
2SK2939S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.05 ohm	35 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
2SK2322(S)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			15 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				15 A
2SK1622(S)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				25 A
2SK2929-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A		25 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN COPPER	.07 ohm	25 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
RJK03C5DPA-00-J53	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A		50 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0043 ohm	50 A	DUAL	R-PDSO-N5		DRAIN	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
RJK0204DPA-00-J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W							1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				50 A
2SJ603-Z-E1-AZ	Renesas Electronics	P-CHANNEL	SINGLE	YES	50 W							1			25 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel				25 A									NOT SPECIFIED	NOT SPECIFIED
RJK03M0DPA-00#J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W							1			65 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				65 A
2SK2939STL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.05 ohm	35 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6	20	245
2SJ603	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	70 A	62.5 mJ	25 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	.075 ohm	25 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK3203(L)	Renesas Electronics	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				45 A
RJK0391DPA-00-J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W							1			50 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel				50 A									NOT SPECIFIED	NOT SPECIFIED
RJK0304DPB	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W							1			35 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel				35 A									NOT SPECIFIED	NOT SPECIFIED
RJK0391DPA-00#J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W							1			50 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel				50 A									NOT SPECIFIED	NOT SPECIFIED
2SK1155	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN LEAD	1.4 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK2356	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	17.4 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		1.5 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
2SK3424-ZK-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			48 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				48 A
2SK3150L-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	TIN BISMUTH	.085 ohm	20 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6
2SK1751	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	40.2 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		1.5 ohm	5 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB
2SJ603-AZ	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	70 A	62.5 mJ	25 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.075 ohm	25 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB		10	260
RJK0349DPA-00-J0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A		45 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.0043 ohm	45 A	DUAL	R-XDSO-N5	1	DRAIN	Not Qualified
2SK1400	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		.7 ohm	7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
2SK1624L	Renesas Electronics	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				4 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.