50 W Power Field Effect Transistors (FET) 808

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
2SK3455B-S17-AY	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	36 A	103 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.6 ohm	12 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB		NOT SPECIFIED	NOT SPECIFIED
2SK1301	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.18 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK1622(L)	Renesas Electronics	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					25 A
2SK2938(S)-(1)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					25 A
2SK2355	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	17.4 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			1.4 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
2SJ603-Z	Renesas Electronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	70 A	62.5 mJ	25 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.075 ohm	25 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
2SK3149-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN COPPER	.085 ohm	20 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
2SK3154	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A		15 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.15 ohm	15 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB
2SK3109-S-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					10 A
2SK3133(L)	Renesas Electronics	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					50 A
2SK1155-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN COPPER	1.4 ohm	5 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
2SK1647(S)-(1)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					2 A
2SK2938(S)-(2)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			25 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					25 A
2SK3203(S)-(2)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					45 A
2SK1869S	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					7 A
2SK1751-Z	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	40.2 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			1.5 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified
2SK1667-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN COPPER	.55 ohm	7 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
RJK0349DPA-01-J0B	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W							1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					45 A
2SK1156	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	1.5 ohm	5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK2912(S)-(1)	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					40 A
2SK1667	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.55 ohm	7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK3109-ZJ-AZ	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					10 A
RJK0658DPA-00#J5A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	100 A		25 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0111 ohm	25 A	DUAL	R-PDSO-N5		DRAIN					NOT SPECIFIED	NOT SPECIFIED
2SK1750	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	40.2 mJ	5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			1.4 ohm	5 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB
2SK1298	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.025 ohm	40 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e0
2SK1156-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN COPPER	1.5 ohm	5 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
2SK1623L-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN BISMUTH	.12 ohm	20 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6
2SK2800-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN COPPER	.04 ohm	40 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
2SK1623L	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.12 ohm	20 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
2SK1313S	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	450 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	1.4 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified			e0
2SK1620STR-E	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W							1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					10 A									NOT SPECIFIED	NOT SPECIFIED
2SK1400A	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.8 ohm	7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK1298-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN COPPER	.025 ohm	40 A	SINGLE	R-PSFM-T3	1	ISOLATED	Not Qualified			e2
2SK1620L-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	150 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	40 A		10 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN BISMUTH	.15 ohm	10 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e6
2SK2930-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN COPPER	.05 ohm	35 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
RJK0331DPB-01-J0	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON			.0049 ohm	40 A	SINGLE	R-PSSO-G4		DRAIN
2SK2912STL-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A		40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN BISMUTH	.04 ohm	40 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e6
RJK0236DPA-00#J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W							1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					50 A
2SK3149	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	.085 ohm	20 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0
2SK1400A-E	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A		7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN COPPER	.8 ohm	7 A	SINGLE	R-PSFM-T3	1	DRAIN	Not Qualified		TO-220AB	e2
2SK1647L	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6 A		2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	7 ohm	2 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
RJK0380DPA-00-J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W							1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					45 A
RJK0349DPA	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			45 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					45 A
2SK1314L	Renesas Electronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A		5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		TIN LEAD	1.5 ohm	5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
RJK03C5DPA-00#J5A	Renesas Electronics	N-CHANNEL	SINGLE	YES	50 W							1			50 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					50 A
2SK1910	Renesas Electronics	N-CHANNEL	SINGLE	NO	50 W	PLASTIC/EPOXY			THROUGH-HOLE	RECTANGULAR		1			25 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel				.06 ohm	25 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB
IXTU1R4N60P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	2.1 A	75 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	-55 Cel		9 ohm	1.4 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE RATED	TO-251				2.4 pF
IXFP12N50PM	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	600 mJ	6 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		MATTE TIN	.5 ohm	6 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED	TO-220AB	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.