Littelfuse - IXTU1R4N60P

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IXTU1R4N60P by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXTU1R4N60P
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Terminal Position: SINGLE; Package Style (Meter): IN-LINE;
Datasheet IXTU1R4N60P Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.4 A
Maximum Pulsed Drain Current (IDM): 2.1 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 50 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 9 ohm
Avalanche Energy Rating (EAS): 75 mJ
Maximum Feedback Capacitance (Crss): 2.4 pF
JEDEC-95 Code: TO-251
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 600 V
Additional Features: AVALANCHE RATED
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