50 W Power Field Effect Transistors (FET) 808

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
SPD04N60C3	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13.5 A	130 mJ	4.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.95 ohm	4.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3
STL8N10F7	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.02 ohm	35 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED
2SK2564	Shindengen Electric Manufacturing	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A		8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	1.2 ohm	8 A	SINGLE	R-PSFM-T3	2	ISOLATED	Not Qualified		TO-220AB	e0		240
FQPF32N20C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	112 A	955 mJ	28 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.082 ohm	28 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
NVMFD5C462NLWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	311 A	174 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0077 ohm		DUAL	R-PDSO-F8	1	DRAIN				e3	30	260		AEC-Q101
IRL620SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	50 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			5.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.8 ohm	5.2 A	SINGLE	R-PSSO-G2	3	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB
NVMFD5C462NT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	298 A	146 mJ	70 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0054 ohm	17.6 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260		AEC-Q101
DMTH8008LFGQ-7	Diodes Incorporated	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	280 A	162 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0069 ohm	70 A	DUAL	S-PDSO-N8		DRAIN				e3		260	31 pF	AEC-Q101; MIL-STD-202
IRFR9214TRPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A	100 mJ	2.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	3 ohm	2.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	10	260
SPP04N60C3XKSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	13.5 A	130 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.95 ohm	4.5 A	SINGLE	R-PSFM-T3				AVALANCHE RATED, HIGH RELIABILITY	TO-220AB	e3
FQD3N60CTM-WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A	150 mJ	2.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3.4 ohm	2.4 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
FQD3N60CTM_WS	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A	150 mJ	2.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3.4 ohm	2.4 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
IRF820SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	210 mJ	2.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3 ohm	2.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	30	260
IRL620S	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A	125 mJ	5.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.8 ohm	5.2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED	TO-263AB	e0
IRL620STRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE	YES	50 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			5.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.8 ohm	5.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-263AB	e3
NVMFS5C460NLAFT1G	Onsemi	N-CHANNEL	SINGLE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	396 A	107 mJ	78 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0072 ohm	78 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	22 pF	AEC-Q101
SIR890DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	20 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	70 A	80 mJ	50 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.004 ohm	30 A	DUAL	R-PDSO-C5			Not Qualified			e3
TK10A80E,S4X(S	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	454 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1 ohm	10 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB				15 pF
FQD19N10LTF	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	62.4 A	220 mJ	15.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.11 ohm	15.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3
IRF7NJZ44V	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	CERAMIC, METAL-SEALED COFIRED	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	88 A	66 mJ	22 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0165 ohm	22 A	BOTTOM	R-CBCC-N3		DRAIN	Not Qualified			e0
IRF7YSZ44VCM	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	METAL	SWITCHING	60 V	PIN/PEG	RECTANGULAR	ENHANCEMENT MODE	1	80 A	71 mJ	20 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	.0195 ohm	20 A	SINGLE	R-MSFM-P3			Not Qualified		TO-257AA	e0
IRF820APBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	140 mJ	2.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn)	3 ohm	2.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3	30	260	2.7 pF
IRF820STRLPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	210 mJ	2.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	3 ohm	2.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
IRF820STRRPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	210 mJ	2.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	3 ohm	2.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
IRFR9310TRPBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.2 A	92 mJ	1.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	7 ohm	1.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	30	260
FQD19N10TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	62.4 A	220 mJ	15.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.1 ohm	15.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
IRF720SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13 A	190 mJ	3.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	1.8 ohm	3.3 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	30	260
IRFR9310PBF	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.2 A	92 mJ	1.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	7 ohm	1.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	10	260
ISL9N322AD3ST	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1			8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.022 ohm	20 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e3
SIHFR9310TR-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.2 A	92 mJ	1.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	7 ohm	1.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252	e3	30	260
SIRC06DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	11.25 mJ	60 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	52 ns	-55 Cel	62 ns		.0027 ohm	60 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	60 pF
STD5NM50T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	300 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.8 ohm	7.5 A	SINGLE	R-PSSO-G2			Not Qualified	AVALANCHE RATED	TO-252AA	e3
STD5NM60T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	200 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	1 ohm	5 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3	30	260
IRFR9214TR	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11 A	100 mJ	2.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	3 ohm	2.7 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e0
IXTP05N100P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	1.25 A	50 mJ	.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					30 ohm	.5 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB
NVMFS5C460NLWFAFT3G	Onsemi	N-CHANNEL	SINGLE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	396 A	107 mJ	78 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0072 ohm	78 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	22 pF	AEC-Q101
FQD3N60TF	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A	200 mJ	2.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	3.6 ohm	2.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3		260
IRF820APBF-BE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	140 mJ		3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			3 ohm	2.5 A	SINGLE	R-PSFM-T3					TO-220AB				2.7 pF
STL11N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	44 A		11 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0095 ohm	11 A	DUAL	S-PDSO-N8		DRAIN		ULTRA-LOW RESISTANCE			NOT SPECIFIED	NOT SPECIFIED
IRF720PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	13 A	190 mJ	3.3 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	1.8 ohm	3.3 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3	30	260
NVMFS5C460NWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	352 A	1667 mJ	71 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0053 ohm	71 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	22 pF	AEC-Q101
RSJ151P10TL	ROHM	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	33 mJ	15 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN COPPER	.14 ohm	15 A	SINGLE	R-PSSO-G2	1					e2	10	260
IRFR230ATM	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			7.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		7.5 A								e0
IXTA08N120P	Littelfuse	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	1200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	1.8 A	80 mJ	.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	25 ohm	.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-263AB	e3	10	260
2SK3466(TE24L,Q)	Toshiba	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							5 A
FQD2N90	Fairchild Semiconductor	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	900 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.8 A	170 mJ	1.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	7.2 ohm	1.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e0
MTP1N45	Motorola	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	450 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	4 A		1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	50 W	150 Cel	SILICON	35 ns		65 ns	TIN LEAD	8 ohm	1 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LEADFORM OPTIONS ARE AVAILABLE	TO-220AB	e0			10 pF
MTP2N35	National Semiconductor	N-CHANNEL	SINGLE	NO	50 W							1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		2 A								e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.