50 W Power Field Effect Transistors (FET) 808

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
STD4NA40	STMicroelectronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			3.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Matte Tin (Sn)		3.3 A								e3
STK4N25	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	20 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1.1 ohm	4 A	SINGLE	R-PSFM-T3			Not Qualified			e3
STK4N25K	STMicroelectronics	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					4 A
STD4NS25	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	120 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			1.1 ohm	4 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252
STD4NB40T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	230 mJ	3.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1.8 ohm	4 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3
STSJ60NH3LL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A		60 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		NICKEL PALLADIUM GOLD	.0075 ohm	15 A	DUAL	R-PDSO-G8	1	DRAIN	Not Qualified	LOW THRESHOLD		e4
STD2NB60	STMicroelectronics	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			2.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					2.6 A
STK3NA50	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10.8 A	40 mJ	2.7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	3 ohm	2.7 A	SINGLE	R-PSIP-T3			Not Qualified			e3
STD3NM60T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	200 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1.5 ohm	3 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3
STD5N20T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	130 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.8 ohm	5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3
STD3N30T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	20 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	1.4 ohm	3 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e0
IRF723	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	350 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	11 A		2.8 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	2.5 ohm	2.8 A	SINGLE	R-PSFM-T3			Not Qualified	HIGH VOLTAGE, FAST SWITCHING	TO-220AB	e0
STL11NH3LL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	44 A	150 mJ	11 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.0115 ohm	11 A	DUAL	S-XDSO-N5	1	DRAIN	Not Qualified			e3	30	260
STL17N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	68 A		17 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.0073 ohm	17 A	DUAL	S-XDSO-N8		DRAIN	Not Qualified	ULTRA-LOW RESISTANCE			NOT SPECIFIED	NOT SPECIFIED
STD5NM50	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	300 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.8 ohm	7.5 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-252AA	e3
STD5N20-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	130 mJ	5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.8 ohm	5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251
STD3NM60-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	200 mJ	3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1.5 ohm	3 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251	e3
STD2NA60	STMicroelectronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			2.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			TIN LEAD		2.3 A								e0
STD15N06L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	50 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.1 ohm	15 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252	e3
STD10N10L	STMicroelectronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel			Matte Tin (Sn)		10 A								e3
STD3NC60T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12.8 A	270 mJ	3.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	2.2 ohm	3.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3
STD3N30LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	20 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1.4 ohm	3 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e3
STD7NK30Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	130 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			.9 ohm	5 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA
STD5NM60	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	200 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	1 ohm	5 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3
STD65N3LLH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	260 A		65 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON			.0097 ohm	65 A	SINGLE	R-PSSO-G2		DRAIN		ULTRA-LOW RESISTANCE	TO-252		NOT SPECIFIED	NOT SPECIFIED
STD1HNC60	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	120 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	5 ohm	2 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e3
STD10NF10-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	70 mJ	13 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.13 ohm	13 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251	e3
STK3NA50K	STMicroelectronics	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			2.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					2.7 A
STP2NC70Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	700 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	5.6 A	60 mJ	1.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	8.5 ohm	1.4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
STD3N30	STMicroelectronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Tin/Lead (Sn/Pb)		3 A								e0
STD1NB80T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	4 A	90 mJ	1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	20 ohm	1 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3
STD20NE06T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	80 mJ	20 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		TIN LEAD	.04 ohm	20 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e0
STD3NC60	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12.8 A	270 mJ	3.2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	2.2 ohm	3.2 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252AA	e3
STD5NM50-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	30 A	300 mJ	5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.8 ohm	7.5 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251	e3
STD15N06-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	50 mJ	15 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		Tin/Lead (Sn/Pb)	.1 ohm	15 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251	e0
STD3N30L	STMicroelectronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Matte Tin (Sn)		3 A								e3
STD3NA50	STMicroelectronics	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			2.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel			Matte Tin (Sn)		2.7 A								e3
STD3NB50T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	40 mJ	3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	2.8 ohm	3 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA	e0
STD1NB80-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	4 A	90 mJ	1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			20 ohm	1 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251		NOT SPECIFIED	260
STD15N06L-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	50 mJ	15 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		Tin/Lead (Sn/Pb)	.1 ohm	15 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251	e0
STK3055E	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	52 A	30 mJ	12 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	50 W	150 Cel	SILICON	165 ns	MATTE TIN	.15 ohm	13 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e3			150 pF
STD3N30-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	300 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	12 A	20 mJ	3 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		TIN LEAD	1.4 ohm	3 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251AA	e0
STD15N06LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	50 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.1 ohm	15 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252	e3
STD35NF3LLT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	300 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.0215 ohm	35 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOW THRESHOLD	TO-252AA	e3	30	260
STL15N3LLH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	60 A		15 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		MATTE TIN	.007 ohm	15 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE		e3	30	260
STD35NF3LL-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	140 A	300 mJ	35 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.0215 ohm	35 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOW THRESHOLD	TO-251AA	e3
STD30NF03LTT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	450 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		MATTE TIN	.035 ohm	30 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOW THRESHOLD	TO-252AA	e3
STD1HNC60-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	120 mJ	2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON			5 ohm	2 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251AA

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.