50 W Power Field Effect Transistors (FET) 808

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FQU2N90TU-AM002	Onsemi	N-CHANNEL	SINGLE	NO	50 W							1			1.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		1.7 A								e3
ATP207-TL-H	Onsemi	N-CHANNEL	SINGLE	YES	50 W							1			65 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN BISMUTH		65 A			1					e6
NVD4810NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	98 mJ	54 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0157 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN				e3	30	260		AEC-Q101
NVTFS5C460NLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	321 A	104 mJ	74 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0076 ohm	74 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	22 pF	AEC-Q101
NTTFS008P03P8ZTWG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	418 A		22 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.0038 ohm	22 A	DUAL	S-PDSO-N5		DRAIN			MO-240BA				1890 pF
2SK2636	Onsemi	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							7 A
NVMFS5C460NLT3G	Onsemi	N-CHANNEL	SINGLE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	396 A	107 mJ	78 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0072 ohm	78 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	22 pF	AEC-Q101
FDMC8010DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	788 A	337 mJ	157 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	40 ns	-55 Cel	74 ns	Matte Tin (Sn) - annealed	.00128 ohm	157 A	DUAL	S-PDSO-N8	1	DRAIN			MO-240BA	e3	30	260	205 pF
NTTFS005N04CTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	297 A	103 mJ	17 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0056 ohm	17 A	SINGLE	S-PDSO-F8	1	DRAIN				e3	30	260	22 pF
NVMFD5C462NWFT1G	Onsemi	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	298 A	146 mJ	70 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0054 ohm	17.6 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260		AEC-Q101
NTD4860N-35G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	130 A	84.5 mJ	65 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0111 ohm	10.4 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3
2SK3820-FD5-E	Onsemi	N-CHANNEL	SINGLE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	104 A	84.5 mJ	26 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	1.65 W	150 Cel	SILICON				Tin/Bismuth (Sn/Bi)	.08 ohm	26 A	SINGLE	R-PSSO-G2	1					e6			110 pF
NVTFS005N04CTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	297 A	103 mJ	17 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0056 ohm	17 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	22 pF	AEC-Q101
FQPF9P25YDTU	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	250 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	650 mJ	6 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	360 ns	-55 Cel	240 ns	MATTE TIN	.62 ohm	6 A	SINGLE	R-PSFM-T3		ISOLATED			TO-220AB	e3			35 pF
NVTFS5C460NLWFTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	321 A	104 mJ	74 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0076 ohm	74 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	22 pF	AEC-Q101
FQD7N30TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	300 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	22 A	380 mJ	5.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.7 ohm	5.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
2SK3816-DL-1E	Onsemi	N-CHANNEL	SINGLE	YES	50 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	60 mJ		2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	1.65 W	150 Cel	SILICON				TIN	.04 ohm	40 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-263AB	e3	30	245	197 pF
NVMFS5C460NLT1G	Onsemi	N-CHANNEL	SINGLE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	396 A	107 mJ	78 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0072 ohm	78 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	22 pF	AEC-Q101
MTD5N25E	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A	84 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	1 ohm	5 A	SINGLE	R-PSSO-G2			Not Qualified			e0
NTMFS5C460NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	520 A	107 mJ	78 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0072 ohm	78 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	22 pF
2SK3816-1E	Onsemi	N-CHANNEL	SINGLE	NO	50 W	PLASTIC/EPOXY		60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	60 mJ		3	IN-LINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	1.65 W	150 Cel	SILICON					.04 ohm	40 A	SINGLE	R-PSIP-T3					TO-262AA				197 pF
FDMS86581	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1		13.5 mJ	30 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	20 ns	-55 Cel	28 ns		.015 ohm	30 A	DUAL	R-PDSO-F5		DRAIN		AVALANCHE ENERGY RATED	MO-240AA		NOT SPECIFIED	NOT SPECIFIED	15 pF
FDMS0348	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	100 A	216 mJ	63 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	28 ns	-55 Cel	44 ns		.007 ohm	35 A	DUAL	R-PDSO-N5	1	DRAIN					40	260	145 pF
FDD8782	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	321 A	70 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.014 ohm	35 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	30	260
NTD4810NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	98 mJ	54 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0157 ohm	8.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
FDD6770A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	200 A	50 mJ	97 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.004 ohm	24 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252		NOT SPECIFIED	NOT SPECIFIED
2SK3820(SMP)	Onsemi	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			26 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							26 A
2SK3816(SMP)	Onsemi	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							40 A
FDMD85100	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	261 A	294 mJ	48 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	35 ns	-55 Cel	40 ns	MATTE TIN	.0099 ohm	48 A	DUAL	R-PDSO-N8	1	DRAIN SOURCE			MO-240AA	e3	30	260	23 pF
NTTFS5C460NLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	321 A	104 mJ	74 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0076 ohm	19 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260
2SK3816-DL-E	Onsemi	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Bismuth (Sn/Bi)		40 A			1					e6
2SK3820(SMP-FD)	Onsemi	N-CHANNEL	SINGLE	YES	50 W						ENHANCEMENT MODE	1			26 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							26 A
MTD5N25ET4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	250 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A	84 mJ	5 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	1 ohm	5 A	SINGLE	R-PSSO-G2			Not Qualified			e0
NVMYS4D6N04CLTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	520 A	107 mJ	78 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.0072 ohm	78 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260	22 pF	AEC-Q101
NVMFS5C460NLWFT1G	Onsemi	N-CHANNEL	SINGLE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	396 A	107 mJ	78 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0072 ohm	78 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	22 pF	AEC-Q101
FQU2N90TU-WS	Onsemi	N-CHANNEL	SINGLE	NO	50 W							1			1.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		1.7 A								e3
FDMC3020DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	100 A	60 mJ	40 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.00625 ohm	17 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified		MO-240BA	e3	30	260
2SK3820-DL-1E	Onsemi	N-CHANNEL	SINGLE	YES	50 W							1			26 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN		26 A			1					e3
FDD8780	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	224 A	73 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.012 ohm	35 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-252AA	e3	30	260
MTP2N20	Onsemi	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		2 A								e0
NTD4860NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	84.5 mJ	65 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0111 ohm	10.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
FQPF10N60CT	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	38 A	700 mJ	9.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.73 ohm	9.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	FAST SWITCHING	TO-220AB	e3
NTMFS5C460NLT3G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	520 A	107 mJ	78 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0072 ohm	78 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	22 pF
IRF720	Onsemi	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			3.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN LEAD		3.3 A								e0	30	235
NTD4860N-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	50 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	130 A	84.5 mJ	65 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0111 ohm	10.4 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3
FDD850N10L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	63 A	41 mJ	15.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.096 ohm	15.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
IRF820	Onsemi	N-CHANNEL	SINGLE	NO	50 W						ENHANCEMENT MODE	1			2.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					TIN LEAD		2.5 A								e0		235
FDMS0308AS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	50 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	66 mJ	49 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.0028 ohm	24 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.