Onsemi - 2SK3816-DL-1E

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2SK3816-DL-1E by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number 2SK3816-DL-1E
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
Datasheet 2SK3816-DL-1E Datasheet
In Stock395
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 40 A
Maximum Pulsed Drain Current (IDM): 160 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 50 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 1.65 W
Maximum Drain-Source On Resistance: .04 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 60 mJ
Maximum Feedback Capacitance (Crss): 197 pF
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Peak Reflow Temperature (C): 245
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Pricing (USD)

Qty. Unit Price Ext. Price
395 $0.769 $303.755

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