FDMD85100 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	FDMD85100
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Package Body Material: PLASTIC/EPOXY; Terminal Finish: MATTE TIN;
Datasheet	FDMD85100 Datasheet
In Stock	3,012

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	35 ns
Maximum Drain Current (ID):	48 A
Maximum Pulsed Drain Current (IDM):	261 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	50 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	40 ns
JESD-30 Code:	R-PDSO-N8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN SOURCE
Maximum Drain-Source On Resistance:	.0099 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	294 mJ
Maximum Feedback Capacitance (Crss):	23 pF
JEDEC-95 Code:	MO-240AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Maximum Drain Current (Abs) (ID):	48 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,012	$1.480	$4,457.760

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