52 W Power Field Effect Transistors (FET) 143

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDU6296	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	100 A	165 mJ	50 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	30 ns	-55 Cel	69 ns		.0088 ohm	21 A	SINGLE	R-PSIP-T3					TO-251AA
FDB6030L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	180 mJ	48 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	75 W	175 Cel	SILICON	225 ns		73 ns	MATTE TIN	.013 ohm	52 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
STTFS010N10MCL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	250 A	73 mJ	50 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	29 ns	-55 Cel	55 ns	Matte Tin (Sn) - annealed	.0106 ohm	50 A	DUAL	R-PDSO-F8	1	DRAIN				e3	30	260	18 pF
SNXH160B90L2Q0PG	Onsemi	N-CHANNEL	COMPLEX	YES	52 W	UNSPECIFIED	SWITCHING	900 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	180 A		32 A	20	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON CARBIDE					.078 ohm	32 A	UPPER	R-XUFM-X20							NOT SPECIFIED	NOT SPECIFIED
FDP6030L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	150 A	100 mJ	48 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	42 ns	-65 Cel	67 ns		.013 ohm	48 A	SINGLE	R-PSFM-T3					TO-220AB
NVD4809NT4G	Onsemi	N-CHANNEL	SINGLE	YES	52 W							1			58 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		58 A			1					e3
FCU900N60Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	13.5 A	47.5 mJ	4.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.9 ohm	4.5 A	SINGLE	R-PSIP-T3					TO-251AA	e3	NOT SPECIFIED	NOT SPECIFIED
FDP6035AL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	180 A	58 mJ	48 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	42 ns	-65 Cel	67 ns		.012 ohm	48 A	SINGLE	R-PSFM-T3					TO-220AB
NTD4904NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	316 A	68.4 mJ	79 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0055 ohm	13 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
NTD3808N-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	16 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	152 A	29.4 mJ	76 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0085 ohm	12 A	SINGLE	R-PSSO-F3	1	DRAIN	Not Qualified			e3		260
FDMC0202S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	120 A	84 mJ	40 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	32 ns	-55 Cel	51 ns	Tin (Sn)	.00315 ohm	40 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	NOT SPECIFIED	260	205 pF
NTD3808N-35G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	16 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	152 A	29.4 mJ	76 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0085 ohm	12 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
NTTFS010N10MCL	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	SQUARE	ENHANCEMENT MODE	1	250 A	73 mJ	50 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	29 ns	-55 Cel	55 ns		.0106 ohm	50 A	DUAL	S-PDSO-F8		DRAIN					NOT SPECIFIED	NOT SPECIFIED	18 pF
NTD4904N-35G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	316 A	68.4 mJ	79 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0055 ohm	13 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3	30	260
NTD4809NH-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	130 A	112.5 mJ	58 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0125 ohm	9 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
FDMC7572S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	120 A	84 mJ	103 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	.00315 ohm	22.5 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified		MO-240BA	e3	30	260
FDMC010N08LC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	200 A	96 mJ	50 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	26 ns	-55 Cel	54 ns	Matte Tin (Sn) - annealed	.0109 ohm	50 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260	30 pF
FDMC7582	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	25 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	60 A	38 mJ	49 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.005 ohm	16.7 A	DUAL	S-PDSO-N5	1	DRAIN			MO-229	e3	30	260
NTD3808NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	16 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	152 A	29.4 mJ	76 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0085 ohm	12 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3		260
FDMC86183	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	189 A	96 mJ	47 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	30 ns	-55 Cel	37 ns	Matte Tin (Sn) - annealed	.0128 ohm	47 A	DUAL	S-PDSO-N5	1	DRAIN		LOW NOISE	MO-240BA	e3	30	260	15 pF
NVMFS5H610NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	243 A	175 mJ	48 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	48 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
NTD4809NHT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	112.5 mJ	58 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0125 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
FDD6296	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	165 mJ	15 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0088 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
NVMFS5H610NLWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	243 A	175 mJ	48 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN	.01 ohm	48 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260		AEC-Q101
NTMFS5H663NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY		60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	327 A	274 mJ	61 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.01 ohm	61 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	7.5 pF
NTD4809NH-35G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	130 A	112.5 mJ	58 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.0125 ohm	9 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
FDPF16N50	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	64 A	780 mJ	16 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.38 ohm	16 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-220AB	e3
STL13N65M2	STMicroelectronics	N-CHANNEL	SINGLE	YES	52 W							1			6.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							6.5 A									NOT SPECIFIED	NOT SPECIFIED
STL13N60DM2	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	600 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	32 A	340 mJ	8 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.37 ohm	8 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	.9 pF
PSMN9R1-30YL,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	52 W						ENHANCEMENT MODE	1			57 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					TIN		57 A			1					e3	30	260
PSMN9R5-100XS,127	NXP Semiconductors	N-CHANNEL	SINGLE	NO	52 W						ENHANCEMENT MODE	1			44 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel							44 A
IPS12N03LBG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	64 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0118 ohm	30 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251	e3
IPS10N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	80 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0104 ohm	30 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251AA	e3
IPF10N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	210 A	80 mJ	30 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0104 ohm	30 A	SINGLE	R-PSSO-G3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252	e3
IPU12N03LBG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	64 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0118 ohm	30 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251AA	e3
IPF10N03LA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY		25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	210 A	80 mJ	30 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.0104 ohm	30 A	SINGLE	R-PSSO-G3	1		Not Qualified	LOGIC LEVEL COMPATIBLE		e0		220
IPU95R1K2P7AKMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	950 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	11 mJ	6 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	1.2 ohm	6 A	SINGLE	R-PSIP-T3		DRAIN			TO-251	e3
IPSH9N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	80 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0094 ohm	30 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251	e3
IPU95R1K2P7	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	950 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	11 mJ	6 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	1.2 ohm	6 A	SINGLE	R-PSIP-T3					TO-251	e3
IPU10N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	80 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0104 ohm	30 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251AA	e3
IPDH9N03LAG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	210 A	80 mJ	30 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0092 ohm	30 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252AA	e3
IPU10N03LA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY		25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	80 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN LEAD	.0104 ohm	30 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251AA	e0
IPI11N03LA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	80 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0115 ohm	30 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-262AA	e3
IPS10N03LA	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY		25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	210 A	80 mJ	30 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0104 ohm	30 A	SINGLE	R-PSIP-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-251AA	e3
IPF12N03LBG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	120 A	64 mJ	30 A	3	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0116 ohm	30 A	SINGLE	R-PSSO-G3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252	e3
BSC085N025SG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	140 A	120 mJ	35 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0085 ohm	14 A	DUAL	R-PDSO-F8		DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3
IRLH6224TR2PBF	Infineon Technologies	N-CHANNEL	SINGLE	YES	52 W							1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							80 A
IPP13N03LBG	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	64 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0128 ohm	30 A	SINGLE	R-PSFM-T3			Not Qualified	LOGIC LEVEL COMPATIBLE	TO-220AB	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.