52 W Power Field Effect Transistors (FET) 143

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NTD5865NLT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	137 A	36 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	.019 ohm	40 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
FDD6685	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		11 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.02 ohm	11 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
SI7113DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	SQUARE	ENHANCEMENT MODE	1	20 A	11.25 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	38 ns	-50 Cel	80 ns	PURE MATTE TIN	.134 ohm	13.2 A	DUAL	S-PDSO-F5	1	DRAIN	Not Qualified				30	260
SI7172ADP-T1-RE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	200 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	50 A	11.25 mJ	17.2 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	54 ns	-55 Cel	48 ns		.08 ohm	17.2 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	8.3 pF
SIS892ADN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	100 V	C BEND	SQUARE	ENHANCEMENT MODE	1	40 A	5 mJ	28 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.033 ohm	28 A	DUAL	S-PDSO-C5		DRAIN
SI7113DN-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	SQUARE	ENHANCEMENT MODE	1	20 A	11.25 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	38 ns	-50 Cel	80 ns	PURE MATTE TIN	.134 ohm	13.2 A	DUAL	S-PDSO-F5	1	DRAIN	Not Qualified				30	260
SIS434DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY		40 V	C BEND	SQUARE	ENHANCEMENT MODE	1	60 A	45 mJ	35 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.0076 ohm	17.6 A	DUAL	S-PDSO-C5	1	DRAIN	Not Qualified			e3	40	260
SIS892DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	100 V	C BEND	SQUARE	ENHANCEMENT MODE	1	50 A	5 mJ	30 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.029 ohm	30 A	DUAL	S-PDSO-C5		DRAIN					40	260
SI7617DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	UNSPECIFIED	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	1	60 A	42 mJ	35 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.0123 ohm	13.9 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	40	260
SI7625DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	UNSPECIFIED	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	1	80 A	20 mJ	35 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn)	.007 ohm	17.3 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SIR624DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	200 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	50 A	11.25 mJ	18.6 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	54 ns	-55 Cel	48 ns		.064 ohm	18.6 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	8.3 pF
FDD6685_NL	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A		11 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.02 ohm	11 A	SINGLE	R-PSSO-G2		DRAIN	Not Qualified		TO-252	e3
FDMC010N08C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	206 A	96 mJ	51 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	29 ns	-55 Cel	41 ns	Matte Tin (Sn) - annealed	.01 ohm	51 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260	30 pF
SIS468DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	80 V	C BEND	SQUARE	ENHANCEMENT MODE	1	60 A	5 mJ	30 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0195 ohm	30 A	DUAL	S-PDSO-C5		DRAIN
BSZ146N10LS5ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	30 mJ	40 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.0146 ohm	40 A	DUAL	S-PDSO-N8	1	DRAIN				e3			15 pF
FCD1300N80Z	Onsemi	N-CHANNEL	SINGLE	YES	52 W							1			4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Matte Tin (Sn) - annealed		4 A			1					e3	30	245
SI7115DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	UNSPECIFIED	SWITCHING	150 V	C BEND	SQUARE	ENHANCEMENT MODE	1	15 A	11.25 mJ	8.9 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.295 ohm	2.3 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SI7119DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	UNSPECIFIED	SWITCHING	200 V	C BEND	SQUARE	ENHANCEMENT MODE	1	5 A	1.25 mJ	3.8 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				PURE MATTE TIN	1.1 ohm	1.2 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified				30	260
SIS890DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	100 V	C BEND	SQUARE	ENHANCEMENT MODE	1	60 A	5 mJ	30 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.0235 ohm	30 A	DUAL	S-PDSO-C5		DRAIN					NOT SPECIFIED	NOT SPECIFIED
SI7322DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	20 A	18 mJ	18 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	3.8 W	150 Cel	SILICON	30 ns	-55 Cel	35 ns	MATTE TIN	.058 ohm	18 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified			e3	30	260	25 pF
SI7119DN-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	UNSPECIFIED	SWITCHING	200 V	C BEND	SQUARE	ENHANCEMENT MODE	1	5 A	1.25 mJ	3.8 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.1 ohm	1.2 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SISA72DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	150 A	20 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	60 ns	-55 Cel	62 ns		.0048 ohm	60 A	DUAL	S-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	60 pF
FQPF7N65C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	212 mJ	7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.4 ohm	7 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	FAST SWITCHING	TO-220AB	e3
SISH101DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	20 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	44 ns	-55 Cel	91 ns		.0072 ohm	35 A	DUAL	S-PDSO-N5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	408 pF
SI7812DN-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	UNSPECIFIED	SWITCHING	75 V	C BEND	SQUARE	ENHANCEMENT MODE	1	25 A	11 mJ	16 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.037 ohm	7.2 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SIS606BDN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	SQUARE	ENHANCEMENT MODE	1	80 A	20 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	34 ns	-55 Cel	48 ns		.0205 ohm	35.3 A	DUAL	S-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	11.2 pF
SIR616DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	200 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	50 A	20 mJ	20.2 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	56 ns	-55 Cel	50 ns		.0535 ohm	20.2 A	DUAL	R-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	9 pF
NTD5865NL-1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	137 A	36 mJ	40 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	.019 ohm	40 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e3
FCD900N60Z	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13.5 A	47.5 mJ	4.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.9 ohm	4.5 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
SISA01DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	150 A	31.2 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	42 ns	-55 Cel	98 ns		.0049 ohm	60 A	DUAL	S-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	70 pF
FQPF7N65CYDTU	Onsemi	N-CHANNEL	SINGLE	NO	52 W							1			7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					MATTE TIN		7 A								e3
SI7322DN-T1-E3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	20 A	18 mJ	18 A	8	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	3.8 W	150 Cel	SILICON	30 ns	-55 Cel	35 ns	MATTE TIN	.058 ohm	18 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified			e3	30	260	25 pF
FQP3P20	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	200 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	11.2 A	150 mJ	2.8 A	3	FLANGE MOUNT	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2.7 ohm	2.8 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
SI7601DN-T1-E3	Vishay Intertechnology	P-CHANNEL	SINGLE	YES	52 W							1			16 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel							16 A									NOT SPECIFIED	NOT SPECIFIED
SI7601DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE	YES	52 W							1			16 A			Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel							16 A									NOT SPECIFIED	NOT SPECIFIED
SISA24DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	25 V	FLAT	SQUARE	ENHANCEMENT MODE	1	150 A	45 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	70 ns	-55 Cel	56 ns		.0014 ohm	60 A	DUAL	S-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	197 pF
STL7DN6LF3	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	26 A	190 mJ	20 A	6	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.06 ohm	20 A	DUAL	R-PDSO-F6	1	DRAIN		AVALANCHE RATED		e3		260		AEC-Q101
BSZ120P03NS3EG	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	73 mJ	40 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.02 ohm	11 A	DUAL	S-PDSO-N8	3	DRAIN	Not Qualified	ESD PROTECTED				260
NTD4809NT4G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	130 A	91 mJ	58 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.014 ohm	9 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
SI7121DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	UNSPECIFIED	SWITCHING	30 V	C BEND	SQUARE	ENHANCEMENT MODE	1	50 A	20 mJ	16 A	5	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.018 ohm	10.6 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
SI7812DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	UNSPECIFIED	SWITCHING	75 V	C BEND	SQUARE	ENHANCEMENT MODE	1	25 A	11 mJ	16 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				PURE MATTE TIN	.037 ohm	7.2 A	DUAL	S-XDSO-C5	1	DRAIN	Not Qualified				30	260
SIS184DN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	100 A	20 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	34 ns	-55 Cel	52 ns		.007 ohm	65.3 A	DUAL	S-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	22 pF
SISA72ADN-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	150 A	11.25 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	44 ns	-55 Cel	80 ns		.00466 ohm	92 A	DUAL	S-PDSO-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED	19 pF
SI7153DN-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	SQUARE	ENHANCEMENT MODE	1	100 A	11.2 mJ	18 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	45 ns	-55 Cel	90 ns	MATTE TIN	.0095 ohm	18 A	DUAL	S-PDSO-F5	1	DRAIN				e3	30	260	390 pF
FDD306P	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	12 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	54 A		6.7 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.028 ohm	6.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
IPD95R1K2P7ATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	52 W	PLASTIC/EPOXY	SWITCHING	950 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	11 mJ	6 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		TIN	1.2 ohm	6 A	SINGLE	R-PSSO-G2	1				TO-252	e3		260
IRFU3910PBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	52 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	150 mJ	15 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN OVER NICKEL	.115 ohm	16 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED	TO-251AA	e3	30	260
NVD4809NHT4G	Onsemi	N-CHANNEL	SINGLE	YES	52 W							1			58 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel					Tin (Sn)		58 A			1					e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.