54 W Power Field Effect Transistors (FET) 75

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
NTD20P06LT4G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	304 mJ	15 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.15 ohm	15.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
FDD86102LZ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	40 A	84 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0225 ohm	8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
IRLI540NPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	54 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	310 mJ	23 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.053 ohm	23 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-220AB	e3
FDMC86260	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	150 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	48 A	121 mJ	16 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.034 ohm	5.4 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260
NTD20P06LG	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	304 mJ	15 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		TIN	.15 ohm	15.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
FDMC8360L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	40 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	240 A	294 mJ	80 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0021 ohm	27 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260
FDMC86160	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	50 A	181 mJ	43 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.014 ohm	9 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	NOT SPECIFIED	NOT SPECIFIED
FDMC86570L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	200 A	253 mJ	56 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0043 ohm	18 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260
FDMC86184	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	100 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	266 A	121 mJ	57 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	32 ns	-55 Cel	41 ns	Matte Tin (Sn) - annealed	.0085 ohm	57 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260	25 pF
IRFBF20SPBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	900 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	6.8 A	180 mJ	1.7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	8 ohm	1.7 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED		e3	30	260
NTD20P06LT4	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	304 mJ	15 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.15 ohm	15.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
IRFBG20PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	54 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	5.6 A	200 mJ	1.4 A	3	FLANGE MOUNT	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	11 ohm	1.4 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3	30	260
NVMFS6H852NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	184 mJ	40 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0142 ohm	40 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	5.4 pF	AEC-Q101
NVMFS6H852NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	208 A	207 mJ	42 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.017 ohm	42 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	6 pF	AEC-Q101
FCD5N60_F085	Fairchild Semiconductor	N-CHANNEL	SINGLE	YES	54 W							1			4.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							4.6 A			1
FCD5N60-F085	Onsemi	N-CHANNEL	SINGLE	YES	54 W							1			4.6 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					MATTE TIN		4.6 A			1					e3	30	260
NTD20P06L	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	50 A	304 mJ	15 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN LEAD	.15 ohm	15.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
NTD20P06L-1G	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	54 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	304 mJ	15 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.15 ohm	15.5 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified			e3		260
IRFH8325TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	100 A	94 mJ	21 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.005 ohm	21 A	DUAL	R-PDSO-F5	1	DRAIN				e3	40	260
NVMFS6H852NLWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	208 A	207 mJ	42 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.017 ohm	42 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	6 pF	AEC-Q101
FCD5N60TM	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	13.8 A	159 mJ	4.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.95 ohm	4.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e3	30	260
FCD5N60TM_WS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A	230 mJ	4.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.6 ohm	7 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
FCP600N65S3R0	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	54 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A	24 mJ	6 A	3	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.6 ohm	6 A	SINGLE	R-PSFM-T3					TO-220AB	e3	NOT SPECIFIED	NOT SPECIFIED
IRFBF20PBF	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	54 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	6.8 A	180 mJ	1.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	8 ohm	1.7 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED	TO-220AB	e3	30	260
SIR466DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	UNSPECIFIED	SWITCHING	30 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	70 A	45 mJ	40 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0035 ohm	28 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3
NTMYS013N08LHTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY		80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	208 A	207 mJ	42 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.017 ohm	42 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260	6 pF
NTP13N10G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	54 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	39 A	85 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.165 ohm	13 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3		260
FCU600N65S3R0	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	54 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15 A	24 mJ	6 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.6 ohm	6 A	SINGLE	R-PSIP-T3					TO-251AA	e3	NOT SPECIFIED	NOT SPECIFIED
FCD600N65S3R0	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15 A	24 mJ	6 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.6 ohm	6 A	SINGLE	R-PSSO-G2	1	DRAIN			TO-252AA	e3	30	260
NTP13N10	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	54 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	39 A	85 mJ	13 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.165 ohm	13 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
FDMC86012	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	230 A	337 mJ	88 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0027 ohm	23 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260
NVMFS5885NLWFT1G	Onsemi	N-CHANNEL	SINGLE	YES	54 W							1			39 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					MATTE TIN		39 A			1					e3	30	260
FDMC8010	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	120 A	153 mJ	75 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0013 ohm	30 A	DUAL	S-PDSO-N5	1	DRAIN		ULTRA LOW RESISTANCE	MO-240BA	e3	30	260
NVMFS6H852NWFT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	184 mJ	40 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0142 ohm	40 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	5.4 pF	AEC-Q101
NVTFS6H854NLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY		80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	182 A	168 mJ	10 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0173 ohm	10 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	7 pF	AEC-Q101
NTMFS6H852NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	208 A	207 mJ	42 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.017 ohm	42 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	6 pF
NVMYS013N08LHTWG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	80 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	208 A	207 mJ	42 A	4	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0131 ohm	42 A	SINGLE	R-PSSO-G4	1	DRAIN				e3	30	260		AEC-Q101
NTD20P06L-1	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	54 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	50 A	304 mJ	15 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN LEAD	.15 ohm	15.5 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified			e0
NVTFS6H854NLWFTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY		80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	182 A	168 mJ	10 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0173 ohm	10 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	7 pF	AEC-Q101
NVMFS5885NLT3G	Onsemi	N-CHANNEL	SINGLE	YES	54 W							1			39 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					MATTE TIN		39 A			1					e3	30	260
FDMC86340	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY	SWITCHING	80 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	200 A	216 mJ	48 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0065 ohm	14 A	DUAL	S-PDSO-N5	1	DRAIN			MO-240BA	e3	30	260
FQP2N60C	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	54 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8 A	120 mJ	2 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	4.7 ohm	2 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
NVMFD020N10MCLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY		100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel			.02 ohm	35 A	DUAL	R-PDSO-F8		DRAIN							5.2 pF	AEC-Q101
NTMFS6H852NT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY		80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	184 mJ	40 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0227 ohm	40 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	5.4 pF
NVMFS5885NLT1G	Onsemi	N-CHANNEL	SINGLE	YES	54 W							1			39 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					MATTE TIN		39 A			1					e3	30	260
NVMFS5885NLWFT3G	Onsemi	N-CHANNEL	SINGLE	YES	54 W							1			39 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					TIN		39 A			1					e3	30	260
NTTFS6H854NLTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	54 W	PLASTIC/EPOXY		80 V	FLAT	SQUARE	ENHANCEMENT MODE	1	182 A	168 mJ	10 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0173 ohm	10 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	7 pF
BUK95180-100A	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	54 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	44 A	1.5 mJ	11 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.2 ohm	11 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.