600 W Power Field Effect Transistors (FET) 37

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STY60NM60

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

240 A

1400 mJ

60 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.055 ohm

60 A

SINGLE

R-PSIP-T3

1

Not Qualified

e3

IXTZ550N055T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

600 W

PLASTIC/EPOXY

SWITCHING

55 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1650 A

3000 mJ

550 A

6

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.001 ohm

550 A

DUAL

R-PDFP-F6

ISOLATED

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

APT100MC120JCU2

Microchip Technology

600 W

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

25 A

IXTH110N10L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

AMPLIFIER

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

3000 mJ

110 A

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.018 ohm

110 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-247AD

e3

10

260

SQJQ160E-T1_GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

600 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

655 A

288 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

57 ns

-55 Cel

119 ns

.00085 ohm

602 A

SINGLE

R-PSSO-G4

DRAIN

40

260

458 pF

AEC-Q101

APTMC120AM20CT1AG

Microchip Technology

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

NO

600 W

UNSPECIFIED

SWITCHING

1200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

2

280 A

143 A

12

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON CARBIDE

-40 Cel

.017 ohm

143 A

UPPER

R-XUFM-X12

ISOLATED

SQJQ186ER-T1_GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

600 W

PLASTIC/EPOXY

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

770 A

180 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

65 ns

-55 Cel

104 ns

.0023 ohm

329 A

DUAL

R-PDSO-G8

DRAIN

77 pF

AEC-Q101

IXFN280N07

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

70 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

1120 A

3000 mJ

280 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.005 ohm

280 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

UL RECOGNIZED

IXFN44N60

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

176 A

3000 mJ

44 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.13 ohm

44 A

UPPER

R-PUFM-X4

DRAIN

Not Qualified

AVALANCHE RATED

IXFN180N10

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

720 A

3000 mJ

180 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.008 ohm

180 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

IXFN24N100

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

96 A

3000 mJ

24 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.39 ohm

24 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

UL RECOGNIZED

SQJQ144AE-T1_GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

600 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1800 A

180 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

68 ns

-55 Cel

89 ns

.0009 ohm

575 A

SINGLE

R-PSSO-G4

DRAIN

220 pF

AEC-Q101

SQJQ144AER-T1_GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

600 W

PLASTIC/EPOXY

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1800 A

180 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

68 ns

-55 Cel

89 ns

.0009 ohm

575 A

DUAL

R-PDSO-G5

DRAIN

40

260

220 pF

AEC-Q101

STE70NM60

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

600 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

280 A

1400 mJ

70 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.055 ohm

70 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

IXFR230N20T

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

630 A

5000 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.008 ohm

156 A

SINGLE

R-PSIP-T3

ISOLATED

AVALANCHE RATED

e1

10

260

60 pF

UL RECOGNIZED

IXFK88N30P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

2000 mJ

88 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.04 ohm

88 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-264AA

e1

10

260

IXFN120N20

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

200 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

480 A

3000 mJ

120 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.017 ohm

120 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

SQJQ112E-T1_GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

600 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

655 A

242 mJ

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

54 ns

-55 Cel

119 ns

.00253 ohm

296 A

SINGLE

R-PSSO-G4

DRAIN

112 pF

AEC-Q101

IXFH88N30P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

300 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

220 A

2000 mJ

88 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.04 ohm

88 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

TO-247AD

e3

10

260

IXTT110N10L2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

600 W

PLASTIC/EPOXY

AMPLIFIER

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

3000 mJ

110 A

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.018 ohm

110 A

SINGLE

R-PSSO-G2

1

DRAIN

AVALANCHE RATED

TO-268AA

e3

10

260

IXFZ520N075T2

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

600 W

PLASTIC/EPOXY

SWITCHING

75 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1560 A

3000 mJ

465 A

6

FLATPACK

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0013 ohm

465 A

DUAL

R-PDFP-F6

ISOLATED

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXFN26N90

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

900 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

104 A

3000 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.3 ohm

26 A

UPPER

R-PUFM-X4

ISOLATED

AVALANCHE RATED

375 pF

UL RECOGNIZED

IXTQ140N10P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

300 A

2500 mJ

140 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.011 ohm

140 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE RATED

e3

STE30NK90Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

900 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

112 A

500 mJ

30 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.26 ohm

28 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

HIGH VOLTAGE

STE40NK90ZD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

900 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

160 A

1200 mJ

40 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.18 ohm

40 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

STE45NK80ZD

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

800 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

180 A

1200 mJ

45 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.13 ohm

45 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

STE34NK80Z

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

800 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

128 A

32 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.24 ohm

32 A

UPPER

R-PUFM-X4

1

ISOLATED

Not Qualified

IXTT140N10P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

600 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

300 A

2500 mJ

140 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.011 ohm

140 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

10

260

IXFN23N100

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

1000 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

92 A

3000 mJ

23 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.43 ohm

23 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

IXFK185N10

Littelfuse

N-CHANNEL

SINGLE

NO

600 W

ENHANCEMENT MODE

1

185 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

185 A

IXFN50N50

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

500 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

200 A

50 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.1 ohm

50 A

UPPER

R-PUFM-X4

DRAIN

Not Qualified

AVALANCHE RATED

IXFN48N55

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

550 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

192 A

3000 mJ

48 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.11 ohm

48 A

UPPER

R-PUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

NOT SPECIFIED

NOT SPECIFIED

IXFN25N90

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

900 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

100 A

3000 mJ

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.33 ohm

25 A

UPPER

R-PUFM-X4

ISOLATED

AVALANCHE RATED

375 pF

UL RECOGNIZED

IXFN170N10

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

PLASTIC/EPOXY

SWITCHING

100 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

680 A

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.01 ohm

170 A

UPPER

R-PUFM-X4

ISOLATED

1200 pF

UL RECOGNIZED

IXFN34N80

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

600 W

UNSPECIFIED

SWITCHING

800 V

UNSPECIFIED

RECTANGULAR

ENHANCEMENT MODE

1

136 A

3000 mJ

34 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL

.24 ohm

34 A

UPPER

R-XUFM-X4

ISOLATED

Not Qualified

AVALANCHE RATED

UL RECOGNIZED

IXFT88N30P

Littelfuse

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

600 W

PLASTIC/EPOXY

SWITCHING

300 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

220 A

2000 mJ

88 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.04 ohm

88 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED

TO-268AA

e3

10

260

IXFN185N10

Littelfuse

600 W

1

185 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

185 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.