SQJQ186ER-T1_GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SQJQ186ER-T1_GE3
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 600 W; Minimum Operating Temperature: -55 Cel; Maximum Drain Current (ID): 329 A;
Datasheet	SQJQ186ER-T1_GE3 Datasheet
In Stock	3,695

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	65 ns
Maximum Drain Current (ID):	329 A
Maximum Pulsed Drain Current (IDM):	770 A
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	600 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	104 ns
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0023 ohm
Avalanche Energy Rating (EAS):	180 mJ
Maximum Feedback Capacitance (Crss):	77 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	80 V
Reference Standard:	AEC-Q101

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,695	-	-

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