61 W Power Field Effect Transistors (FET) 42

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

NTMFS5C670NLT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

440 A

166 mJ

71 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0088 ohm

71 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

15 pF

NTMFS5C670NLT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

440 A

166 mJ

71 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0088 ohm

71 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

15 pF

IPD60R1K0CEATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

46 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

1 ohm

6.8 A

SINGLE

R-PSSO-G2

DRAIN

TO-252

NOT SPECIFIED

NOT SPECIFIED

NVTFS014P04M8LTAG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

224 A

143 mJ

49 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0138 ohm

49 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

32 pF

AEC-Q101

FQD6N50CTF

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

300 mJ

4.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

4.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

PSMN4R0-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

61 W

ENHANCEMENT MODE

1

84 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

84 A

1

e3

30

260

IRFI4110GPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

61 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

290 A

71 mJ

72 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN

.0045 ohm

72 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

PSMN5R0-30YL,115

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

336 A

32 mJ

91 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.008 ohm

84 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

MO-235

e3

30

260

IPD60R1K0CEAUMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

46 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

1 ohm

6.8 A

SINGLE

R-PSSO-G2

3

DRAIN

TO-252

e3

NDD04N50ZT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

120 mJ

3 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0027 ohm

3 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

NTMYS6D2N06CLTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

440 A

166 mJ

71 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0088 ohm

17 A

SINGLE

R-PSSO-G4

1

e3

30

260

15 pF

NDD03N60Z-1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

61 W

PLASTIC/EPOXY

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

100 mJ

2.6 A

3

IN-LINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

3.6 ohm

2.6 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e3

30

260

NDD04N50Z-1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

61 W

PLASTIC/EPOXY

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

120 mJ

3 A

3

IN-LINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0027 ohm

3 A

SINGLE

R-PSIP-T3

1

DRAIN

Not Qualified

e3

30

260

NDD03N60ZT4G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

100 mJ

2.6 A

2

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

3.6 ohm

2.6 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

NTMFS5C670NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

440 A

166 mJ

71 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.007 ohm

71 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

8.5 pF

NVMFS5C670NLWFAFT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

440 A

166 mJ

71 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0088 ohm

71 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

15 pF

AEC-Q101

NVMFS5C670NWFT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

440 A

166 mJ

71 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.007 ohm

71 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

8.5 pF

AEC-Q101

NVMYS6D2N06CLTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

440 A

166 mJ

17 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0088 ohm

17 A

SINGLE

R-PSSO-G4

1

DRAIN

e3

30

260

15 pF

AEC-Q101

NVTFWS014P04M8LTAG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

40 V

FLAT

SQUARE

ENHANCEMENT MODE

1

224 A

143 mJ

49 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0138 ohm

49 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

32 pF

AEC-Q101

FQD6N50CTM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

300 mJ

4.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.2 ohm

4.5 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

e3

30

260

NVMFS5C670NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

440 A

166 mJ

71 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.007 ohm

71 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

8.5 pF

AEC-Q101

NVMYS6D2N06CLTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

610 A

166 mJ

17 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

.00894 ohm

17 A

SINGLE

R-PSSO-G4

DRAIN

NOT SPECIFIED

NOT SPECIFIED

15 pF

AEC-Q101

BUK7575-55

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

61 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

79 A

30 mJ

19.7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

61 W

175 Cel

SILICON

35 ns

45 ns

MATTE TIN

.075 ohm

19.7 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

ESD PROTECTION

TO-220AB

e3

85 pF

BUK7575-55,127

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

61 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

79 A

30 mJ

19.7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

61 W

175 Cel

SILICON

35 ns

45 ns

MATTE TIN

.075 ohm

19.7 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

ESD PROTECTION

TO-220AB

e3

85 pF

BUK9575-55

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

61 W

PLASTIC/EPOXY

SWITCHING

55 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

79 A

30 mJ

19.7 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

61 W

175 Cel

SILICON

85 ns

85 ns

.075 ohm

19.7 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

TO-220AB

85 pF

PSMN4R5-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

NO

61 W

ENHANCEMENT MODE

1

84 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

84 A

1

e3

30

260

PSMN5R0-30YL

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

336 A

32 mJ

84 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.0067 ohm

91 A

SINGLE

R-PSSO-G4

1

DRAIN

Not Qualified

MO-235

e3

30

260

BUK9675-55

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

79 A

30 mJ

19.7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.075 ohm

19.7 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

IPU60R1K0CEBKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

61 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

46 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

1 ohm

6.8 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

NOT SPECIFIED

NOT SPECIFIED

IPU60R1K0CEAKMA2

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

61 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

46 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

1 ohm

6.8 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

IPU60R1K0CEAKMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

61 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

46 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

1 ohm

6.8 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

NOT SPECIFIED

NOT SPECIFIED

IPU60R1K0CE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

61 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

46 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

1 ohm

6.8 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e3

IPD60R1K0CE

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

SWITCHING

600 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

12 A

46 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

1 ohm

6.8 A

SINGLE

R-PSSO-G2

3

DRAIN

TO-252

e3

TPH8R008NH(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

61 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

TPH8R80ANH(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

61 W

ENHANCEMENT MODE

1

59 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

59 A

TPH8R80ANH(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

61 W

ENHANCEMENT MODE

1

59 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

59 A

TPH8R008NH(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

61 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

TPH8R80ANH(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

61 W

ENHANCEMENT MODE

1

59 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

59 A

TPH8R008NH(TE12L1,Q)

Toshiba

N-CHANNEL

SINGLE

YES

61 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

TPH8R008NH(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

61 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

TPH8R80ANH(TE12L1,Q)

Toshiba

N-CHANNEL

SINGLE

YES

61 W

ENHANCEMENT MODE

1

59 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

59 A

TPH8R80ANH,L1Q

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

SQUARE

ENHANCEMENT MODE

1

139 A

79 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0088 ohm

59 A

DUAL

S-PDSO-F8

DRAIN

50 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.