Toshiba - TPH8R80ANH(TE12L1,Q)

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TPH8R80ANH(TE12L1,Q) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number TPH8R80ANH(TE12L1,Q)
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
Datasheet TPH8R80ANH(TE12L1,Q) Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 61 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 59 A
Maximum Drain Current (Abs) (ID): 59 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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