69 W Power Field Effect Transistors (FET) 94

Reset All

Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
FDD4141	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	337 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	32 ns	-55 Cel	87 ns	MATTE TIN	.0123 ohm	50 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260	310 pF
FDD4685	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY		40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	121 mJ	40 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	43 ns	-55 Cel	81 ns	Matte Tin (Sn) - annealed	.042 ohm	8.4 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260	205 pF
FDD4141-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	337 mJ	58 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0123 ohm	10.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260		AEC-Q101
FDD4141_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	337 mJ	58 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.0123 ohm	10.8 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260		AEC-Q101
BSZ042N06NSATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	130 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.0042 ohm	40 A	DUAL	S-PDSO-N8	1	DRAIN				e3			44 pF
FDD4685-F085	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	121 mJ	40 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	43 ns	-55 Cel	81 ns	MATTE TIN	.027 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260	205 pF	AEC-Q101
FDD4685_F085	Fairchild Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	121 mJ	40 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON	43 ns	-55 Cel	81 ns	MATTE TIN	.027 ohm	32 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-252AA	e3	30	260	205 pF	AEC-Q101
BSC039N06NSATMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	50 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.0039 ohm	100 A	DUAL	R-PDSO-F8	1	DRAIN				e3			44 pF
FDMS86102LZ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	40 A	84 mJ	22 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.025 ohm	7 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE	MO-240AA	e3	30	260
IRFR5305PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	110 A	280 mJ	25 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.065 ohm	31 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-252AA	e3	30	260
FDMS86252	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	20 A	50 mJ	16 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.051 ohm	4.6 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
BSZ086P03NS3EG	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	160 A	105 mJ	40 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0134 ohm	13.5 A	DUAL	S-PDSO-N8	1	DRAIN	Not Qualified	ESD PROTECTED		e3		260
BSZ067N06LS3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	60 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	80 A	118 mJ	20 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0121 ohm	14 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		260
FDMS86520L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	60 A	91 mJ	22 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0082 ohm	13.5 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
FDMS8333L	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	250 A	216 mJ	76 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	35 ns	-55 Cel	63 ns	Matte Tin (Sn) - annealed	.0031 ohm	76 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260	55 pF
BSC084P03NS3GATMA1	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	105 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	224.9 ns	-55 Cel	62.2 ns	TIN	.0084 ohm	14.9 A	DUAL	R-PDSO-N8	1	DRAIN	Not Qualified	AVALANCHE RATED		e3			160 pF
FDD5353	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	253 mJ	54 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0123 ohm	11.5 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
PSMN4R0-30YL,115	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	396 A	41 mJ	100 A	4	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Tin (Sn)	.0065 ohm	99 A	SINGLE	R-PSSO-G4	1	DRAIN	Not Qualified		MO-235	e3	30	260
SI7149DP-T1-GE3	Vishay Intertechnology	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	UNSPECIFIED	SWITCHING	30 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	70 A	20 mJ	50 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0052 ohm	23.7 A	DUAL	R-PDSO-C8	1	DRAIN	Not Qualified			e3	30	260
SI7790DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	UNSPECIFIED	SWITCHING	40 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	70 A	80 mJ	50 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn)	.0045 ohm	50 A	DUAL	R-XDSO-C5	1	DRAIN	Not Qualified			e3	30	260
BSC130P03LSG	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY		30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	90 A	148 mJ	22.5 A	8	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.013 ohm	12 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE		e3		260
IRFU5305PBF	Infineon Technologies	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	69 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	110 A	280 mJ	25 A	3	IN-LINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.065 ohm	31 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-251AA	e3	30	260
PSMN4R4-30MLC,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	69 W						ENHANCEMENT MODE	1			70 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					TIN		70 A			1					e3	30	260
FDMS86520	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	80 A	86 mJ	42 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0074 ohm	14 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
SIR416DP-T1-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	40 V	C BEND	RECTANGULAR	ENHANCEMENT MODE	1	70 A	80 mJ	50 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0038 ohm	50 A	DUAL	R-PDSO-C5		DRAIN				e3
BSC084P03NS3GXT	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	105 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	224.9 ns	-55 Cel	62.2 ns		.0084 ohm	14.9 A	DUAL	R-PDSO-N8		DRAIN		AVALANCHE RATED			NOT SPECIFIED	NOT SPECIFIED	160 pF
R8002CND3FRATL	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8 A	.265 mJ	2 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			4.3 ohm	2 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED	10 pF	AEC-Q101
BSC039N06NS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	50 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.0039 ohm	100 A	DUAL	R-PDSO-F5	1	DRAIN				e3			44 pF
BSC0901NS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	400 A	80 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		TIN	.0024 ohm	28 A	DUAL	R-PDSO-F8	1	DRAIN	Not Qualified			e3		260
NXH80B120MNQ0SNG	Onsemi	N-CHANNEL	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE	NO	69 W	UNSPECIFIED	SWITCHING	1200 V	UNSPECIFIED	RECTANGULAR	ENHANCEMENT MODE	2	69 A		23 A	22	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON CARBIDE		-40 Cel		Matte Tin (Sn) - annealed	.11 ohm	23 A	UPPER	R-XUFM-X22		ISOLATED				e3
NTMFS5C442NLT1G	Onsemi	N-CHANNEL	SINGLE	YES	69 W							1			121 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					MATTE TIN		121 A			1					e3	30	260
NTMFS5C442NLT3G	Onsemi	N-CHANNEL	SINGLE	YES	69 W							1			121 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Matte Tin (Sn) - annealed		121 A			1					e3	30	260
FDMS86320	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	50 A	60 mJ	22 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0117 ohm	10.5 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
FDD3860	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	121 mJ	42 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.036 ohm	6.2 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
NTTFS003N04CTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	484 A	155 mJ	103 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0035 ohm	22 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	28 pF
NVTFS003N04CTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	484 A	155 mJ	103 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0035 ohm	103 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	28 pF	AEC-Q101
NVTFWS003N04CTAG	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY		40 V	FLAT	SQUARE	ENHANCEMENT MODE	1	484 A	155 mJ	103 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON		-55 Cel		MATTE TIN	.0035 ohm	103 A	DUAL	S-PDSO-F8	1	DRAIN				e3	30	260	28 pF	AEC-Q101
NTMFS5H425NLT1G	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY		40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	650 A	289 mJ	118 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	.0043 ohm	118 A	DUAL	R-PDSO-F5	1	DRAIN				e3	30	260	32 pF
STP4NM60	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	69 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	200 mJ	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	1.5 ohm	4 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
PHP21N06LT	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	69 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	76 A	34 mJ	21 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.075 ohm	19 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, FAST SWITCHING	TO-220AB	e3
PHB21N06LT	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	76 A	34 mJ	21 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				Tin (Sn)	.075 ohm	19 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	245
PHP21N06T	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	69 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	84 A	30 mJ	21 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.075 ohm	21 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	ESD PROTECTED	TO-220AB	e3
PHP21N06T,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	69 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	84 A	30 mJ	21 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.075 ohm	21 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	ESD PROTECTED	TO-220AB	e3
PHB21N06LTT/R	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	76 A	34 mJ	21 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.075 ohm	19 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3		245
PHP21N06LT,127	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	69 W	PLASTIC/EPOXY	SWITCHING	55 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	76 A	34 mJ	21 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				MATTE TIN	.075 ohm	19 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE, FAST SWITCHING	TO-220AB	e3
PHB21N06LT,118	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	69 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	76 A	34 mJ	21 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel	SILICON				TIN	.075 ohm	19 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOGIC LEVEL COMPATIBLE		e3	30	245
PSMN3R8-30LL,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	69 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							40 A
PSMN3R9-25MLC,115	NXP Semiconductors	N-CHANNEL	SINGLE	YES	69 W						ENHANCEMENT MODE	1			70 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	175 Cel					TIN		70 A			1					e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.