Infineon Technologies - BSC039N06NSATMA1

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BSC039N06NSATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC039N06NSATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Terminal Form: FLAT; Maximum Drain Current (ID): 100 A;
Datasheet BSC039N06NSATMA1 Datasheet
In Stock20,091
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 100 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 69 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0039 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 50 mJ
Other Names: BSC039N06NSTR
BSC039N06NSCT-ND
BSC039N06NSDKR
BSC039N06NSATMA1DKR
BSC039N06NSATMA1CT
BSC039N06NSDKR-ND
BSC039N06NS-ND
BSC039N06NSATMA1TR
SP000985386
BSC039N06NSTR-ND
BSC039N06NS
Maximum Feedback Capacitance (Crss): 44 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
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