70 W Power Field Effect Transistors (FET) 299

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

STP12N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

650 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

150 mJ

8.5 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.43 ohm

8.5 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STD3NK80Z-1

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

170 mJ

2.5 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

4.5 ohm

2.5 A

SINGLE

R-PSIP-T3

Not Qualified

AVALANCHE RATED

TO-251

e3

STB36NF06LT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

235 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.048 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

NOT SPECIFIED

245

STB16PF06LT4

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

64 A

250 mJ

16 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.165 ohm

16 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-263AB

e3

STP10NM50N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

143 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.63 ohm

7 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STL22NF10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

UNSPECIFIED

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

22 A

82 mJ

22 A

5

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.06 ohm

5.3 A

QUAD

S-XQCC-N5

DRAIN

Not Qualified

STB6N52K3

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

525 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

110 mJ

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

1.2 ohm

5 A

SINGLE

R-PSSO-G2

1

ULTRA-LOW RESISTANCE

TO-263AB

e3

30

245

STB20NE06

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

100 mJ

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.08 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

STP95N2LH5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

380 A

165 mJ

80 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.007 ohm

95 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e3

STD30PF03L-1

STMicroelectronics

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

96 A

850 mJ

24 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.04 ohm

24 A

SINGLE

R-PSIP-T3

1

Not Qualified

TO-251AA

e3

STD30NF06T4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

112 A

230 mJ

28 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn) - annealed

.028 ohm

28 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

STP10NM60N

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

200 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

22 ns

-55 Cel

47 ns

MATTE TIN

.55 ohm

8 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

AVALANCHE ENERGY RATED

TO-220AB

e3

1.2 pF

STD52P3LLH6

STMicroelectronics

P-CHANNEL

SINGLE

YES

70 W

1

52 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

52 A

NOT SPECIFIED

NOT SPECIFIED

STP10NM60ND

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

32 A

130 mJ

8 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.6 ohm

8 A

SINGLE

R-PSFM-T3

TO-220AB

e3

STP11N06

STMicroelectronics

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

11 A

e3

STW16NA40FI

STMicroelectronics

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

BUZ10

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

92 A

150 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

85 W

175 Cel

SILICON

95 ns

145 ns

TIN LEAD

.07 ohm

23 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e0

150 pF

STP8NM60ND

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

28 A

200 mJ

7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.7 ohm

7 A

SINGLE

R-PSFM-T3

Not Qualified

TO-220AB

e3

STL12N65M5

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

650 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

7.2 A

150 mJ

8.5 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.43 ohm

1.8 A

SINGLE

S-PSSO-N4

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

STD5NK50ZT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

17.6 A

130 mJ

4.4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

1.5 ohm

4.4 A

SINGLE

R-PSSO-G2

1

Not Qualified

TO-252AA

e3

30

260

STB20NE06LT4

STMicroelectronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

80 A

100 mJ

20 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.085 ohm

20 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-263AB

e3

BUK9245-55A/C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

70 W

ENHANCEMENT MODE

1

28 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

28 A

BUK9245-55A

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

55 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

112 A

62 mJ

28 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Tin (Sn)

.05 ohm

28 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

IRFJ442

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

5 A

e0

IRFJ342

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

6 A

e0

IRFJ341

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

7.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

7.5 A

e0

IRL3103D2PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

54 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

54 A

IRFJ343

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

6 A

e0

BUZ47A

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

3.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.9 A

IRFJ340

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 W

METAL

400 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

30 A

7.5 A

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.55 ohm

7.5 A

BOTTOM

O-MBFM-P2

Not Qualified

HIGH RELIABILITY

TO-213AA

e0

IRFJ243

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

11 A

e0

IRFJ142

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

10 A

e0

IRFJ242

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

11 A

e0

IRFJ143

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

10 A

e0

IRFJ441

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

6 A

e0

IRFJ141

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

15 A

e0

IRFJ443

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

5 A

e0

BUZ28

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

18 A

BUZ37

Infineon Technologies

N-CHANNEL

SINGLE

NO

70 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

13 A

IRFZ34VSTRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

81 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.028 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

TO-263AB

e3

DMP10H088SPS-13

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

70 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

80 A

52 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

70 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.083 ohm

20 A

DUAL

R-PDSO-F8

DRAIN

e3

260

47 pF

MIL-STD-202

TPCA8078(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

70 W

ENHANCEMENT MODE

1

54 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

54 A

TPCA8055-H(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

70 W

ENHANCEMENT MODE

1

56 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

56 A

TPCA8078(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

70 W

ENHANCEMENT MODE

1

54 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

54 A

TPCA8055-H(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

70 W

ENHANCEMENT MODE

1

56 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

56 A

TPCA8078(TE12L1,Q)

Toshiba

N-CHANNEL

SINGLE

YES

70 W

ENHANCEMENT MODE

1

54 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

54 A

TPCA8078(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

70 W

ENHANCEMENT MODE

1

54 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

54 A

FS30SM-3

Renesas Electronics

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

70 W

PLASTIC/EPOXY

SWITCHING

150 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.092 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.