70 W Power Field Effect Transistors (FET) 299

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
IRF530NPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	60 A	93 mJ	17 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel		MATTE TIN OVER NICKEL	.09 ohm	17 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	AVALANCHE RATED, HIGH RELIABILITY	TO-220AB	e3	30	250
STD35P6LLF6	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A		35 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON		-55 Cel			.036 ohm	35 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED
STD30NF06LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	140 A	150 mJ	35 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn)	.03 ohm	35 A	SINGLE	R-PSSO-G2	1		Not Qualified	LOGIC LEVEL COMPATIBLE	TO-252AA	e3	30	260
STD3NK80ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	800 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	10 A	170 mJ	2.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	4.5 ohm	2.5 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-252	e3	30	260
STD2NK100Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	1000 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	7.4 A	170 mJ	2 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	13.7 ns	-55 Cel	74 ns	MATTE TIN	8.5 ohm	1.85 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	AVALANCHE ENERGY RATED	TO-252AA	e3		260	9 pF
STD7NK40ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	400 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21.6 A	130 mJ	5.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		MATTE TIN	1 ohm	5.4 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3
ATP302-TL-H	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY		60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	280 A	197 mJ	70 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN BISMUTH	.018 ohm	70 A	SINGLE	R-PSSO-G2	1	DRAIN				e6	30	260
STL8N10LF3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	31.2 A	190 mJ	20 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.05 ohm	20 A	DUAL	R-PDSO-F5		DRAIN		AVALANCHE RATED			NOT SPECIFIED	NOT SPECIFIED		AEC-Q101
STD2NK90ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	900 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	8.4 A	150 mJ	2.1 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	6.5 ohm	2.1 A	SINGLE	R-PSSO-G2	1		Not Qualified	AVALANCHE RATED	TO-252AA	e3
STD15NF10T4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	60 A	75 mJ	23 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.08 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STD4NK60ZT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	120 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	2 ohm	4 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252AA	e3	30	260
STD5N52U	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	525 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	17.6 A	170 mJ	4.4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	1.5 ohm	4.4 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3	30	260
STD86N3LH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	165 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.0065 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STD3PK50Z	STMicroelectronics	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	11.2 A		2.8 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel		Matte Tin (Sn) - annealed	4 ohm	2.8 A	SINGLE	R-PSSO-G2	1				TO-252	e3	30	260
STD80N4F6	STMicroelectronics	N-CHANNEL	SINGLE	YES	70 W							1			80 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel					MATTE TIN		80 A			1					e3		260
STD5N95K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	950 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	14 A	70 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	28 ns	-55 Cel	57 ns	MATTE TIN	2.5 ohm	3.5 A	SINGLE	R-PSSO-G2	1	DRAIN		AVALANCHE ENERGY RATED	TO-252AA	e3		260	1 pF
STP36NF06L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	120 A	225 mJ	30 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.05 ohm	30 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
STD4NK60Z-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	120 mJ	4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	2 ohm	4 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251	e3	30	260
STB8N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	28 A	120 mJ	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.6 ohm	7 A	SINGLE	R-PSSO-G2	1		Not Qualified	ULTRA-LOW RESISTANCE	TO-263AB	e3	30	245
STB4NK60Z-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16 A	120 mJ	4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2 ohm	4 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA	e3
FDD2670	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	375 mJ	3.6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	.13 ohm	3.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STH6N100FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	24 A	850 mJ	3.7 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	70 W	150 Cel	SILICON	120 ns			Tin/Lead (Sn/Pb)	2 ohm	3.7 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-218	e0			130 pF
STL8DN10LF3	STMicroelectronics	N-CHANNEL	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	31.2 A	190 mJ	20 A	6	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.05 ohm	20 A	DUAL	R-PDSO-F6	1	DRAIN		AVALANCHE RATED		e3		260		AEC-Q101
STP3NK80Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	10 A	170 mJ	2.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	4.5 ohm	2.5 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3
STP40NF03L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	250 mJ	40 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.035 ohm	40 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified	LOW THRESHOLD	TO-220AB	e3
STP5NK50Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	17.6 A	130 mJ	4.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1.5 ohm	4.4 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STD2NK90Z-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8.4 A	150 mJ	2.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN	6.5 ohm	2.1 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-251AA	e3
STL11N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	UNSPECIFIED	SWITCHING	650 V	FLAT	SQUARE	ENHANCEMENT MODE	1	34 A	130 mJ	8.5 A	5	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			.53 ohm	8.5 A	QUAD	S-XQFP-F5		DRAIN					NOT SPECIFIED	NOT SPECIFIED
STP2NK90Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	900 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	8.4 A	150 mJ	2.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	6.5 ohm	2.1 A	SINGLE	R-PSFM-T3			Not Qualified	AVALANCHE RATED	TO-220AB	e3
FDD8876	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1		95 mJ	73 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	149 ns	-55 Cel	122 ns	Matte Tin (Sn) - annealed	.01 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
BUK9245-55A,118	NXP Semiconductors	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	55 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	112 A	62 mJ	28 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				TIN	.05 ohm	28 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252AA	e3	30	260
FDD6670A	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	100 A	67 mJ	66 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.008 ohm	15 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	FAST SWITCHING	TO-252	e3	30	260
ATP405-TL-H	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	148 mJ	40 A	2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN BISMUTH	.033 ohm	40 A	SINGLE	R-PSSO-G2	1	DRAIN				e6	30	260	170 pF
ATP301-TL-H	Onsemi	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY		100 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	112 A	54 mJ	28 A	2	SMALL OUTLINE	Other Transistors	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN BISMUTH	.075 ohm	28 A	SINGLE	R-PSSO-G2	1	DRAIN				e6	30	260
ATP405	Onsemi	N-CHANNEL	SINGLE	YES	70 W						ENHANCEMENT MODE	1			40 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							40 A
ATP404	Onsemi	N-CHANNEL	SINGLE	YES	70 W						ENHANCEMENT MODE	1			95 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							95 A
FDU8876	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		95 mJ	73 A	3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON	149 ns	-55 Cel	122 ns		.01 ohm	15 A	SINGLE	R-PSIP-T3					TO-251AA		NOT SPECIFIED	NOT SPECIFIED
ATP602	Onsemi	N-CHANNEL	SINGLE	YES	70 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							5 A
2SK4179GS	Onsemi	N-CHANNEL	SINGLE	NO	70 W						ENHANCEMENT MODE	1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							80 A
2SK4179	Onsemi	N-CHANNEL	SINGLE	NO	70 W						ENHANCEMENT MODE	1			80 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							80 A
2SK2634	Onsemi	N-CHANNEL	SINGLE	NO	70 W						ENHANCEMENT MODE	1			3.5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3.5 A
FDD5670	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	60 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	150 A	360 mJ	48 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.015 ohm	21 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
2SK2405(SMP)	Onsemi	N-CHANNEL	SINGLE	NO	70 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							10 A
FDP8876	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1		180 mJ	70 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0105 ohm	70 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e3
FDMS8672AS	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	253 mJ	99 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.005 ohm	18 A	DUAL	R-PDSO-N5	1		Not Qualified					260
2SK2083	Onsemi	N-CHANNEL	SINGLE	NO	70 W						ENHANCEMENT MODE	1			5 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR									5 A
2SK2405(SMP-FD)	Onsemi	N-CHANNEL	SINGLE	YES	70 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							10 A
STD96N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	150 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.007 ohm	80 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.