70 W Power Field Effect Transistors (FET) 299

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
STD9NM50N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	30 A	150 mJ	7.5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.56 ohm	7.5 A	SINGLE	R-PSSO-G2			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
STH8NA80FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28.8 A	260 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1.5 ohm	4.5 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified
STH7NA100FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	800 mJ	4.3 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				TIN LEAD	1.7 ohm	4.3 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified			e0
STU95N2LH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	165 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.007 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified		TO-251
STI8N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	120 mJ	7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.6 ohm	7 A	SINGLE	R-PSIP-T3			Not Qualified	ULTRA-LOW RESISTANCE	TO-262AA		NOT SPECIFIED	NOT SPECIFIED
STD90N02L	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	240 A	360 mJ	60 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.006 ohm	60 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified	LOW THRESHOLD		e3
STU4N62K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	620 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15.2 A		3.8 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1.95 ohm	3.8 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251		NOT SPECIFIED	NOT SPECIFIED
STB45NF3LLT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	241 mJ	45 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.02 ohm	45 A	SINGLE	R-PSSO-G2	1		Not Qualified			e3
STU95N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	150 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0075 ohm	80 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified		TO-251	e3	30	260
STB95N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	150 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.007 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3	30	245
STH55N10FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	220 A	600 mJ	33 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	70 W	150 Cel	SILICON	480 ns				.03 ohm	33 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-218				350 pF
STH8N80FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	35 A	800 mJ	5.1 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	70 W	150 Cel	SILICON	135 ns				1.2 ohm	5.1 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-218				150 pF
STU80N4F6	STMicroelectronics	N-CHANNEL	SINGLE	NO	70 W							1			80 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		175 Cel							80 A									NOT SPECIFIED	NOT SPECIFIED
STD4LNK60Z	STMicroelectronics	N-CHANNEL	SINGLE	YES	70 W	PLASTIC/EPOXY			GULL WING	RECTANGULAR		1			3.3 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							3.3 A	SINGLE	R-PSSO-G2			Not Qualified		TO-252AA
STSJ100NH3LL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	400 A		22 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				NICKEL PALLADIUM GOLD	.005 ohm	100 A	DUAL	R-PDSO-G8	1	DRAIN	Not Qualified			e4
STSJ80N4LL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	40 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	72 A		80 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.007 ohm	18 A	DUAL	R-PDSO-G8			Not Qualified	LOW THRESHOLD		e3
STH80N05FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	50 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	900 mJ	52 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	70 W	150 Cel	SILICON	1460 ns				.012 ohm	52 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-218				650 pF
STB4N62K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	620 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	15.2 A		3.8 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1.95 ohm	3.8 A	SINGLE	R-PSSO-G2			Not Qualified		TO-263AB		NOT SPECIFIED	NOT SPECIFIED
STH75N06FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	60 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	300 A	900 mJ	48 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	70 W	150 Cel	SILICON	1460 ns				.014 ohm	48 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-218				650 pF
STU2NK100Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	1000 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	7.4 A	170 mJ	1.85 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	13.7 ns	-55 Cel	74 ns	Matte Tin (Sn) - annealed	8.5 ohm	1.85 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE ENERGY RATED	TO-251AA	e3	30	260	9 pF
STU5N95K5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	950 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	14 A	70 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	28 ns	-55 Cel	57 ns		2.5 ohm	3.5 A	SINGLE	R-PSIP-T3		DRAIN		AVALANCHE ENERGY RATED	TO-251AA		NOT SPECIFIED	NOT SPECIFIED	1 pF
STW7NA90FI	STMicroelectronics	N-CHANNEL	SINGLE	NO	70 W						ENHANCEMENT MODE	1			4.7 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel					Tin/Lead (Sn/Pb)		4.7 A								e0
STULED525	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	525 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	20 A	100 mJ		3	IN-LINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			1.5 ohm	5 A	SINGLE	R-PSIP-T3		DRAIN			TO-251
STDLED525	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	525 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	20 A	100 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON		-55 Cel			1.5 ohm	5 A	SINGLE	R-PSSO-G2		DRAIN			TO-252
STU8NM60ND	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	200 mJ	7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.7 ohm	7 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251	e3	30	260
STH60N10FI	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	100 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	720 mJ	36 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	70 W	150 Cel	SILICON	480 ns				.025 ohm	36 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-218				350 pF
STH26N25FI	STMicroelectronics	N-CHANNEL	SINGLE	NO	70 W						ENHANCEMENT MODE	1			16 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel							16 A
STB45NF3LL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	241 mJ	45 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.02 ohm	45 A	SINGLE	R-PSSO-G2	1		Not Qualified			e3
STSJ20NM20N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	200 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A		20 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.13 ohm	20 A	DUAL	R-PDSO-G8		DRAIN	Not Qualified
STL6NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	UNSPECIFIED	SWITCHING	600 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	23 A	65 mJ	5.7 A	12	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.92 ohm	1 A	QUAD	S-XQCC-N12		DRAIN	Not Qualified
STP7NK40Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	400 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	21.6 A	130 mJ	5.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	1 ohm	5.4 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
STK2N80	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	800 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	9.6 A	80 mJ	2.1 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	70 W	150 Cel	SILICON	107 ns			TIN LEAD	7 ohm	2.1 A	SINGLE	R-PSIP-T3			Not Qualified			e0			30 pF
STU85N3LH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	30 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	320 A	165 mJ	80 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.0071 ohm	80 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	TO-251	e3
STD90N02L-1	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	240 A	360 mJ	60 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON					.006 ohm	60 A	SINGLE	R-PSIP-T3		DRAIN	Not Qualified	LOW THRESHOLD	TO-251
STD95N3LLH6	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	150 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.007 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STD4NK60Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	120 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	2 ohm	4 A	SINGLE	R-PSSO-G2	1		Not Qualified		TO-252	e3	30	260
STB4NK60Z	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	600 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	16 A	120 mJ	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					2 ohm	4 A	SINGLE	R-PSSO-G2			Not Qualified		TO-263AB		NOT SPECIFIED	NOT SPECIFIED
STD95N2LH5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	320 A	165 mJ	80 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				Matte Tin (Sn) - annealed	.006 ohm	80 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-252	e3	30	260
STU10NM60N	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	32 A	200 mJ	8 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON	22 ns	-55 Cel	47 ns	Matte Tin (Sn) - annealed	.55 ohm	8 A	SINGLE	R-PSIP-T3	1	DRAIN	Not Qualified	AVALANCHE ENERGY RATED	TO-251AA	e3	30	260	1.2 pF
STU12N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	34 A	150 mJ	8.5 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.43 ohm	8.5 A	SINGLE	R-PSIP-T3	1		Not Qualified		TO-251	e3	30	260
STU8N65M5	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	650 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	28 A	120 mJ	7 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					.6 ohm	7 A	SINGLE	R-PSIP-T3			Not Qualified	ULTRA-LOW RESISTANCE	TO-251		NOT SPECIFIED	NOT SPECIFIED
STI4N62K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	620 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	15.2 A		3.8 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1.95 ohm	3.8 A	SINGLE	R-PSIP-T3			Not Qualified		TO-262AA		NOT SPECIFIED	NOT SPECIFIED
STSJ100NHS3LL	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	80 A	1800 mJ	100 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.0057 ohm	20 A	DUAL	R-PDSO-G8	3	DRAIN	Not Qualified			e3	30	260
STB40NF03LT4	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	250 mJ	40 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		175 Cel	SILICON				MATTE TIN	.035 ohm	40 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified		TO-263AB	e3
STSJ3NM50	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	70 W	PLASTIC/EPOXY	SWITCHING	500 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A		.63 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					3 ohm	.63 A	DUAL	R-PDSO-G8		DRAIN	Not Qualified
STU5N52K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	525 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	17.6 A		4.4 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON					1.5 ohm	4.4 A	SINGLE	R-PSIP-T3			Not Qualified		TO-251		NOT SPECIFIED	NOT SPECIFIED
STW9NA60	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	600 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	38 A	450 mJ	6.4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				MATTE TIN	.8 ohm	6.4 A	SINGLE	R-PSFM-T3		ISOLATED	Not Qualified		TO-247AC	e3
STU5N62K3	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	70 W	PLASTIC/EPOXY	SWITCHING	620 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	16.8 A	120 mJ	4.2 A	3	IN-LINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				Matte Tin (Sn) - annealed	1.6 ohm	4.2 A	SINGLE	R-PSIP-T3	1			ULTRA LOW-ON RESISTANCE	TO-251	e3	30	260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.