STMicroelectronics - STD2NK100Z

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STD2NK100Z by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STD2NK100Z
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260;
Datasheet STD2NK100Z Datasheet
In Stock44,184
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 13.7 ns
Maximum Drain Current (ID): 1.85 A
Maximum Pulsed Drain Current (IDM): 7.4 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 2
Maximum Power Dissipation (Abs): 70 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 74 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 8.5 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 170 mJ
Other Names: 497-7964-6
497-7964-2
STD2NK100Z-ND
497-7964-1
Maximum Feedback Capacitance (Crss): 9 pF
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 1000 V
Qualification: Not Qualified
Additional Features: AVALANCHE ENERGY RATED
Maximum Drain Current (Abs) (ID): 2 A
Peak Reflow Temperature (C): 260
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