Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Highest Frequency Band | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | Nominal Turn Off Time (toff) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Transistor Element Material | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Maximum Gate-Emitter Threshold Voltage | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Nominal Turn On Time (ton) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
74 W |
PLASTIC/EPOXY |
SWITCHING |
400 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
290 mJ |
5.5 A |
3 |
FLANGE MOUNT |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
1 ohm |
5.5 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
30 |
260 |
|||||||||||||||||
|
Genesic Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
3300 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 A |
4 A |
7 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-55 Cel |
1.2 ohm |
4 A |
SINGLE |
R-PSSO-G7 |
DRAIN |
TO-263 |
2.4 pF |
IEC-60747-8-4 |
||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
74 W |
ENHANCEMENT MODE |
1 |
28.1 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
28.1 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
250 mJ |
9 A |
2 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Pure Matte Tin (Sn) - annealed |
.4 ohm |
9 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
30 |
260 |
||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
74 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
26 A |
500 mJ |
6.5 A |
3 |
FLANGE MOUNT |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.8 ohm |
6.5 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e3 |
30 |
260 |
|||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
150 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
132 A |
80 mJ |
33 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.036 ohm |
33 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
250 mJ |
9 A |
2 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.4 ohm |
9 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
74 W |
1 |
5.9 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN |
5.9 A |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
36 A |
250 mJ |
9 A |
2 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.4 ohm |
9 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
|||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
290 mJ |
3.6 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
2.2 ohm |
3.6 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
74 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
230 mJ |
5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
1.4 ohm |
5 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
30 |
260 |
4.3 pF |
|||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
74 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
230 mJ |
5 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
1.4 ohm |
5 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-262AA |
e3 |
30 |
260 |
||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
26 A |
500 mJ |
6.5 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.8 ohm |
6.5 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-263AB |
e3 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
74 W |
1 |
5.9 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN |
5.9 A |
3 |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
74 W |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
90 A |
22 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-40 Cel |
.056 ohm |
30 A |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
12 pF |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
NO |
74 W |
UNSPECIFIED |
SWITCHING |
1200 V |
UNSPECIFIED |
RECTANGULAR |
ENHANCEMENT MODE |
4 |
90 A |
22 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON CARBIDE |
-40 Cel |
.056 ohm |
30 A |
UPPER |
R-XUFM-X22 |
ISOLATED |
NOT SPECIFIED |
NOT SPECIFIED |
12 pF |
|||||||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
400 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
290 mJ |
3.6 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
1 ohm |
5.5 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
e0 |
||||||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
400 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
290 mJ |
3.6 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
1 ohm |
5.5 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
e0 |
||||||||||||||||||||||
|
Texas Instruments |
N-CHANNEL |
SINGLE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
112 A |
125 mJ |
60 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0065 ohm |
21 A |
DUAL |
R-PDSO-N8 |
1 |
DRAIN |
AVALANCHE RATED |
e3 |
30 |
260 |
65 pF |
||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
400 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
290 mJ |
5.5 A |
2 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
1 ohm |
5.5 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE |
NO |
74 W |
PLASTIC/EPOXY |
200 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
9 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.4 ohm |
9 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
TO-220AB |
e3 |
||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
290 mJ |
3.6 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
2.2 ohm |
3.6 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
74 W |
PLASTIC/EPOXY |
SWITCHING |
400 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
290 mJ |
5.5 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
1 ohm |
5.5 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
30 |
260 |
4 pF |
|||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
230 mJ |
5 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
1.4 ohm |
5 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
290 mJ |
3.6 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
2.2 ohm |
3.6 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
74 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
230 mJ |
5 A |
3 |
IN-LINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.4 ohm |
5 A |
SINGLE |
R-PSIP-T3 |
DRAIN |
Not Qualified |
TO-262AA |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
400 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
22 A |
290 mJ |
3.6 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
1 ohm |
5.5 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
e0 |
||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18 A |
280 mJ |
4.5 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
1.5 ohm |
4.5 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-263AB |
e3 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18.6 A |
200 mJ |
6.2 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.75 ohm |
6.2 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
HIGH VOLTAGE |
TO-252AA |
e3 |
260 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
274 A |
33 mJ |
70 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Tin (Sn) |
.0086 ohm |
70 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
MO-235 |
e3 |
30 |
260 |
|||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
230 mJ |
5 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
1.4 ohm |
5 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
230 mJ |
5 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
1.4 ohm |
5 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
e0 |
||||||||||||||||||||||
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
500 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
20 A |
230 mJ |
5 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
1.4 ohm |
5 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
137 A |
32 mJ |
34 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Tin (Sn) |
.0275 ohm |
34 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
MO-235 |
e3 |
30 |
260 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
112 A |
28.1 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Tin (Sn) |
.0395 ohm |
28.1 A |
SINGLE |
R-PSSO-G4 |
1 |
DRAIN |
Not Qualified |
MO-235 |
e3 |
30 |
260 |
||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
74 W |
PLASTIC/EPOXY |
SWITCHING |
600 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18.6 A |
200 mJ |
6.2 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.75 ohm |
6.2 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
74 W |
ENHANCEMENT MODE |
1 |
44 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
TIN |
44 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
74 W |
PLASTIC/EPOXY |
SWITCHING |
250 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
32 A |
205 mJ |
8.1 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.45 ohm |
8.1 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e0 |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
74 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
126 A |
220 mJ |
42 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.022 ohm |
42 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e0 |
235 |
|||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6.5 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.8 ohm |
6.5 A |
SINGLE |
R-PSSO-G2 |
3 |
DRAIN |
Not Qualified |
TO-263AB |
e3 |
30 |
260 |
|||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
74 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
3 |
FLANGE MOUNT |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
188 ns |
-55 Cel |
128 ns |
MATTE TIN |
.14 ohm |
18 A |
SINGLE |
R-PSFM-T3 |
Not Qualified |
TO-220AB |
e3 |
140 pF |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
200 mJ |
20 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
.022 ohm |
20 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
e0 |
||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
57 A |
200 mJ |
19 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.099 ohm |
19 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
260 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
200 mJ |
20 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.04 ohm |
20 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e3 |
260 |
||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
200 mJ |
20 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.022 ohm |
20 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
e0 |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
200 mJ |
20 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.04 ohm |
20 A |
SINGLE |
R-PSSO-G2 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
e0 |
235 |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
74 W |
PLASTIC/EPOXY |
SWITCHING |
400 V |
THROUGH-HOLE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
14 A |
200 mJ |
4 A |
3 |
FLANGE MOUNT |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
1.8 ohm |
4 A |
SINGLE |
R-PSFM-T3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-220AB |
e0 |
235 |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
74 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
60 A |
200 mJ |
20 A |
2 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
.022 ohm |
20 A |
SINGLE |
R-PSSO-G2 |
DRAIN |
Not Qualified |
e0 |
Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.
The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.
Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.