78 W Power Field Effect Transistors (FET) 95

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUZ34

Infineon Technologies

N-CHANNEL

SINGLE

NO

78 W

ENHANCEMENT MODE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

14 A

e0

BSB027P03LX3G

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

METAL

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

290 mJ

142 A

3

CHIP CARRIER

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0027 ohm

27 A

BOTTOM

R-MBCC-N3

DRAIN

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BSC196N10NSG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

164 A

60 mJ

45 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0196 ohm

8.5 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

e3

260

IRF6798MTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

300 A

220 mJ

197 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0013 ohm

37 A

BOTTOM

R-XBCC-N3

1

DRAIN

Not Qualified

IRF6715MPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

270 A

200 mJ

180 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.0016 ohm

34 A

BOTTOM

R-XBCC-N3

DRAIN

Not Qualified

e1

BSB056N10NN3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

METAL

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

332 A

450 mJ

83 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

SILVER NICKEL

.0056 ohm

9 A

BOTTOM

R-MBCC-N3

3

DRAIN

Not Qualified

e4

IRF6898MPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

280 A

473 mJ

213 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0011 ohm

35 A

BOTTOM

R-XBCC-N3

1

DRAIN

e3

IRF6898MTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

280 A

473 mJ

213 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.0011 ohm

35 A

BOTTOM

R-XBCC-N3

1

DRAIN

IRFB812PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

78 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

14.4 A

150 mJ

3.6 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.2 ohm

3.6 A

SINGLE

R-PSFM-T3

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRFR812TRRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14.4 A

150 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

2.2 ohm

3.6 A

SINGLE

R-PSSO-G2

DRAIN

TO-252AA

7.3 pF

BSC032N03S

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

200 A

550 mJ

23 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.0049 ohm

23 A

DUAL

R-PDSO-N8

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e0

235

BSC109N10NS3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

252 A

70 mJ

63 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0109 ohm

63 A

DUAL

R-PDSO-N8

1

DRAIN

Not Qualified

e3

IRFR812PBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

3.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN OVER NICKEL

3.6 A

1

e3

30

260

BSC252N10NSFG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

160 A

68 mJ

40 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0252 ohm

7.2 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

e3

260

IRF6716MTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

320 A

330 mJ

180 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.0016 ohm

39 A

BOTTOM

R-XBCC-N3

1

DRAIN

Not Qualified

e1

30

260

IRF6716MTR1PBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

180 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILVER NICKEL

180 A

3

e4

30

260

BSC265N10LSFG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

160 A

68 mJ

40 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0265 ohm

6.5 A

DUAL

R-PDSO-F8

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

260

BSB044N08NN3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

METAL

SWITCHING

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

360 A

660 mJ

90 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

SILVER NICKEL

.0044 ohm

18 A

BOTTOM

R-MBCC-N3

3

DRAIN

Not Qualified

e4

IRFR812TRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14.4 A

150 mJ

3.6 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN OVER NICKEL

2.2 ohm

3.6 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

7.3 pF

BSC019N04LSATMA1

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

400 A

90 mJ

100 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.0027 ohm

100 A

DUAL

R-PDSO-F8

1

DRAIN

e3

136 pF

BSC029N025SG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

25 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

680 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0045 ohm

24 A

DUAL

R-PDSO-F8

3

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

BSC026N02KSG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

550 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0045 ohm

25 A

DUAL

R-PDSO-F8

3

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

IRF6715MTRPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

270 A

200 mJ

180 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.0016 ohm

34 A

BOTTOM

R-XBCC-N3

1

DRAIN

Not Qualified

e1

30

260

IRF6715MTR1PBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

270 A

200 mJ

180 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.0016 ohm

34 A

BOTTOM

R-XBCC-N3

DRAIN

Not Qualified

e1

BSB022NE2LXG

Infineon Technologies

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

151 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

151 A

BSB028N06NN3G

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

METAL

SWITCHING

60 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

360 A

590 mJ

90 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

SILVER NICKEL

.0028 ohm

22 A

BOTTOM

R-MBCC-N3

3

DRAIN

Not Qualified

e4

IRF6798MPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

300 A

220 mJ

197 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.0013 ohm

37 A

BOTTOM

R-XBCC-N3

DRAIN

Not Qualified

e1

IRFR812TRLPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

500 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

14.4 A

150 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

2.2 ohm

3.6 A

SINGLE

R-PSSO-G2

DRAIN

TO-252AA

7.3 pF

BSB024N03LXG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

400 A

220 mJ

145 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0024 ohm

27 A

BOTTOM

R-XBCC-N3

3

DRAIN

Not Qualified

e3

260

IRFH7446TR2PBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

78 W

1

85 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

85 A

IRF6798MTR1PBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

197 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

197 A

IRF6716MPBF

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

UNSPECIFIED

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

320 A

330 mJ

180 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.0016 ohm

39 A

BOTTOM

R-XBCC-N3

DRAIN

Not Qualified

e1

BSC032N03SG

Infineon Technologies

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

200 A

550 mJ

100 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0049 ohm

23 A

DUAL

R-PDSO-F8

3

DRAIN

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

260

DMT10H017LPD-13

Diodes Incorporated

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

78 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

60 A

150 mJ

54.7 A

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2.2 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.0174 ohm

54.7 A

DUAL

R-PDSO-N8

DRAIN

e3

260

DMJ70H1D4SJ3

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

78 W

PLASTIC/EPOXY

SWITCHING

700 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

24 A

10 mJ

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

1.4 ohm

6.1 A

SINGLE

R-PSIP-T3

TO-251

e3

260

1.5 pF

MIL-STD-202

TPH4R50ANH(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

TPHR9003NL(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

TPH4R008NH(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

TPH4R50ANH(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

TPH4R50ANH(TE12L1,Q)

Toshiba

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

TPHR9003NL(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

TPH2R306NH(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

130 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

130 A

TPH2R306NH(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

130 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

130 A

TPHR9003NL(TE12L1,Q)

Toshiba

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

TPHR9003NL(TE12L,Q)

Toshiba

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

TPH4R50ANH(TE12L1)

Toshiba

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

TPH4R008NH(TE12L)

Toshiba

N-CHANNEL

SINGLE

YES

78 W

ENHANCEMENT MODE

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.