78 W Power Field Effect Transistors (FET) 95

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Terminal Form	Package Shape	Operating Mode	No. of Elements	Maximum Pulsed Drain Current (IDM)	Avalanche Energy Rating (EAS)	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Operating Temperature	Transistor Element Material	Maximum Turn On Time (ton)	Minimum Operating Temperature	Maximum Turn Off Time (toff)	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)
TPH4R50ANH1,LQ(M	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	SQUARE	ENHANCEMENT MODE	1	200 A	274 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0045 ohm	60 A	DUAL	S-PDSO-F8		DRAIN							63 pF
TPH2900ENH,L1Q	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	200 V	FLAT	SQUARE	ENHANCEMENT MODE	1	102 A	176 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.029 ohm	33 A	DUAL	S-PDSO-F8		DRAIN							50 pF
TPH4R50ANH,L1Q	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	SQUARE	ENHANCEMENT MODE	1	200 A	274 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0045 ohm	60 A	DUAL	S-PDSO-F8		DRAIN							63 pF
TPH4R50ANH,LQ(M1	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	100 V	FLAT	SQUARE	ENHANCEMENT MODE	1	200 A	274 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0045 ohm	60 A	DUAL	S-PDSO-F8		DRAIN							63 pF
FDMS8820	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	180 A	294 mJ	116 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.002 ohm	28 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
FDMS2734	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	250 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	30 A		14 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Nickel/Palladium/Gold (Ni/Pd/Au)	.122 ohm	2.8 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified			e4	NOT SPECIFIED	NOT SPECIFIED
FDMS8558S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	25 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	140 A	145 mJ	90 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0015 ohm	38 A	DUAL	R-PDSO-F5	1	DRAIN		ULTRA LOW RESISTANCE	MO-240AA	e3	30	260
FDMC7660DC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	SQUARE	ENHANCEMENT MODE	1	200 A	220 mJ	40 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0022 ohm	30 A	DUAL	S-PDSO-N5	1	DRAIN	Not Qualified	ULTRA-LOW RESISTANCE	MO-240BA	e3	30	260
SIHD6N62E-GE3	Vishay Intertechnology	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	620 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	12 A	88 mJ	6 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.9 ohm	6 A	SINGLE	R-PSSO-G2		DRAIN			TO-252AA		NOT SPECIFIED	NOT SPECIFIED
AOD21357	Alpha & Omega Semiconductor	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	30 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	180 A	76 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.008 ohm	70 A	SINGLE	R-PSSO-G2		DRAIN			TO-252		NOT SPECIFIED	NOT SPECIFIED	365 pF
FDMS2672	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY		200 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	20 A		3.7 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				NICKEL PALLADIUM GOLD SILVER	.156 ohm	3.7 A	DUAL	R-PDSO-N8	1		Not Qualified			e4	30	260
TPH1R712MD,L1Q	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	SQUARE	ENHANCEMENT MODE	1	200 A	468 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0027 ohm	60 A	DUAL	S-PDSO-F5		DRAIN							1550 pF
IRFH7446TRPBF	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	40 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	468 A	152 mJ	85 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0033 ohm	85 A	DUAL	R-PDSO-F5	1	DRAIN
TPH2R306NH,L1Q	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	60 V	FLAT	SQUARE	ENHANCEMENT MODE	1	200 A	453 mJ		8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0023 ohm	60 A	DUAL	S-PDSO-F8		DRAIN							100 pF
FDMS3572	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY		80 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	50 A		22 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				NICKEL PALLADIUM GOLD SILVER	.029 ohm	8.8 A	DUAL	R-PDSO-N8	1		Not Qualified			e4	30	260
FDMS3672	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	UNSPECIFIED	SWITCHING	100 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	30 A		22 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)	.023 ohm	22 A	DUAL	R-XDSO-N8	1	DRAIN	Not Qualified			e4	NOT SPECIFIED	NOT SPECIFIED
FDMS5672	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY		60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	60 A		22 A	8	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				NICKEL PALLADIUM GOLD SILVER	.018 ohm	10.6 A	DUAL	R-PDSO-N8	1		Not Qualified			e4	30	260
TPH1R712MD	Toshiba	P-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	20 V	FLAT	SQUARE	ENHANCEMENT MODE	1	200 A	468 mJ		5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0027 ohm	60 A	DUAL	S-PDSO-F5		DRAIN							1550 pF
IXTF02N450	Littelfuse	N-CHANNEL	SINGLE	NO	78 W						ENHANCEMENT MODE	1			.2 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							.2 A
R6507END3TL1	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A	136 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.665 ohm	7 A	SINGLE	R-PSSO-G2		DRAIN			TO-252				60 pF
TPH1500CNH,L1Q	Toshiba	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	150 V	FLAT	SQUARE	ENHANCEMENT MODE	1	148 A	198 mJ	38 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0154 ohm	38 A	DUAL	S-PDSO-F5		DRAIN							50 pF
R6507KND3TL1	ROHM	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	650 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	21 A	136 mJ		2	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.665 ohm	7 A	SINGLE	R-PSSO-G2		DRAIN			TO-252				20 pF
BSB028N06NN3GXUMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	METAL	SWITCHING	60 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	360 A	590 mJ	90 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				SILVER NICKEL	.0028 ohm	22 A	BOTTOM	R-MBCC-N3	3	DRAIN	Not Qualified			e4
BSB165N15NZ3GXUMA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	METAL	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A	440 mJ	45 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				SILVER NICKEL	.0165 ohm	9 A	BOTTOM	R-MBCC-N3	3	DRAIN	Not Qualified			e4
NTP65N02R	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	78 W	PLASTIC/EPOXY	SWITCHING	25 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	160 A	60 mJ	65 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0105 ohm	7.6 A	SINGLE	R-PSFM-T3		DRAIN	Not Qualified		TO-220AB	e0		235
FDP5N50NZ	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	78 W	PLASTIC/EPOXY	SWITCHING	500 V	THROUGH-HOLE	RECTANGULAR	ENHANCEMENT MODE	1	18 A	160 mJ	4.5 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	1.5 ohm	4.5 A	SINGLE	R-PSFM-T3			Not Qualified		TO-220AB	e3
FDMS3008SDC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A	112 mJ	49 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN	.0026 ohm	29 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260
NTB65N02R	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	60 mJ	65 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0105 ohm	7.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
FDMS8670	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	150 A	288 mJ	135 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.0026 ohm	24 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified					260
FDMS8674	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	150 A	181 mJ	21 A	5	SMALL OUTLINE	FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON					.005 ohm	17 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified					260
NTB65N02RT4	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	25 V	GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	160 A	60 mJ	65 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.0105 ohm	7.6 A	SINGLE	R-PSSO-G2	1	DRAIN	Not Qualified			e0		235
FDMS7660	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	150 A	128 mJ	144 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				Matte Tin (Sn) - annealed	.0028 ohm	25 A	DUAL	R-PDSO-N5	1	DRAIN	Not Qualified		MO-240AA	e3	30	260
NTMFS006N08MC	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	80 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	216 A	51 mJ	82 A	5	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel		MATTE TIN	.006 ohm	82 A	DUAL	R-PDSO-F5	1	DRAIN			MO-240AA	e3	30	260	31 pF
FDMD8530	Onsemi	N-CHANNEL	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	2	1047 A	661 mJ	201 A	8	SMALL OUTLINE		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON	49 ns	-55 Cel	148 ns	MATTE TIN	.00125 ohm	201 A	DUAL	R-PDSO-N8	1	DRAIN SOURCE			MO-240AA	e3	30	260	310 pF
FDMS8670S	Onsemi	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	PLASTIC/EPOXY	SWITCHING	30 V	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	200 A		42 A	5	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				MATTE TIN	.0035 ohm	20 A	DUAL	R-PDSO-F5	1	DRAIN	Not Qualified			e3	30	260
BUZ25	STMicroelectronics	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	NO	78 W	METAL	SWITCHING	100 V	PIN/PEG	ROUND	ENHANCEMENT MODE	1	75 A		19 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				TIN LEAD	.1 ohm	19 A	BOTTOM	O-MBFM-P2			Not Qualified	FAST SWITCHING	TO-3	e0
BSB150N15NZ3G	Infineon Technologies	N-CHANNEL	SINGLE	YES	78 W						ENHANCEMENT MODE	1			48 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel							48 A
BUZ35	Infineon Technologies	N-CHANNEL	SINGLE	NO	78 W						ENHANCEMENT MODE	1			9.9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		9.9 A								e0
BSN012N03LS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	145 mJ	50 A	6	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.0016 ohm	50 A	BOTTOM	R-XBCC-N6		DRAIN					NOT SPECIFIED	NOT SPECIFIED	190 pF
BSN012N03LSXUSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	UNSPECIFIED	SWITCHING	30 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	145 mJ	50 A	6	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.0016 ohm	50 A	BOTTOM	R-XBCC-N6		DRAIN					NOT SPECIFIED	NOT SPECIFIED	190 pF
BUZ53C	Infineon Technologies	N-CHANNEL	SINGLE	NO	78 W						ENHANCEMENT MODE	1			2.3 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		2.3 A								e0
BSN011NE2LSXUSA1	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	145 mJ	50 A	6	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.0015 ohm	50 A	BOTTOM	R-XBCC-N6		DRAIN					NOT SPECIFIED	NOT SPECIFIED	130 pF
BUZ83	Infineon Technologies	N-CHANNEL	SINGLE	NO	78 W						ENHANCEMENT MODE	1			2.9 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		2.9 A								e0
BUZ83A	Infineon Technologies	N-CHANNEL	SINGLE	NO	78 W						ENHANCEMENT MODE	1			3.4 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		3.4 A								e0
BSN011NE2LS	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	UNSPECIFIED	SWITCHING	25 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	200 A	145 mJ	50 A	6	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON		-55 Cel			.0015 ohm	50 A	BOTTOM	R-XBCC-N6		DRAIN					NOT SPECIFIED	NOT SPECIFIED	130 pF
BSB165N15NZ3G	Infineon Technologies	N-CHANNEL	SINGLE WITH BUILT-IN DIODE	YES	78 W	METAL	SWITCHING	150 V	NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	180 A	440 mJ	45 A	3	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel	SILICON				SILVER NICKEL	.0165 ohm	9 A	BOTTOM	R-MBCC-N3	3	DRAIN				e4
BUZ23	Infineon Technologies	N-CHANNEL	SINGLE	NO	78 W						ENHANCEMENT MODE	1			10 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel			-55 Cel		Tin/Lead (Sn/Pb)		10 A								e0
BUZ44A	Infineon Technologies	N-CHANNEL	SINGLE	NO	78 W						ENHANCEMENT MODE	1			4.8 A			FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	150 Cel					Tin/Lead (Sn/Pb)		4.8 A								e0

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.