TPH2R306NH,L1Q by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	TPH2R306NH,L1Q
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 78 W; Minimum DS Breakdown Voltage: 60 V; Package Style (Meter): SMALL OUTLINE;
Datasheet	TPH2R306NH,L1Q Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	60 A
Maximum Pulsed Drain Current (IDM):	200 A
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	78 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-F8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0023 ohm
Avalanche Energy Rating (EAS):	453 mJ
Other Names:	TPH2R306NHL1QDKR TPH2R306NH,L1Q(M TPH2R306NHL1QTR TPH2R306NHL1QCT
Maximum Feedback Capacitance (Crss):	100 pF
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	60 V

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